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公开(公告)号:US20170294468A1
公开(公告)日:2017-10-12
申请号:US15238468
申请日:2016-08-16
Applicant: SK hynix Inc.
Inventor: Sung-Kun PARK , Yun-Hui YANG , Pyong-Su KWAG , Dong-Hyun WOO , Young-Jun KWON , Min-Ki NA , Cha-Young LEE , Ho-Ryeong LEE
IPC: H01L27/146
CPC classification number: H01L27/14616 , H01L27/14603 , H01L27/14614 , H01L27/1463 , H01L27/14638 , H01L27/14643 , H01L27/14689
Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.
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公开(公告)号:US20180130834A1
公开(公告)日:2018-05-10
申请号:US15606095
申请日:2017-05-26
Applicant: SK hynix Inc.
Inventor: Cha-Young LEE
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14683
Abstract: Disclosed is an image sensor, which includes a first PD isolation region for determining first to fourth PD regions, an FD isolation region formed between the first to fourth PD regions, and a floating diffusion formed in the FD isolation region. Horizontal distances from a perimeter of the floating diffusion to interfaces between the FD isolation region and the first to fourth PD regions are equal to each other.
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公开(公告)号:US20160071895A1
公开(公告)日:2016-03-10
申请号:US14813792
申请日:2015-07-30
Applicant: SK hynix Inc.
Inventor: Won-Jun LEE , Kyoung-In LEE , Cha-Young LEE
IPC: H01L27/146 , H04N5/335 , H04N5/232 , H04N5/235 , H04N9/04
CPC classification number: H01L27/14627 , H01L27/14605 , H01L27/1462 , H01L27/14621 , H01L27/14625 , H04N5/3696
Abstract: This technology provides an image sensor and an electronic device including the same, In an image sensor including a pixel array including a plurality of unit pixels, each of the plurality of unit pixels may include a photoelectric conversion element and a pixel lens over the photoelectric conversion element and comprising a plurality of light condensing layers in which a lower layer has a larger area than an upper layer, wherein the pixel lens has a shape changing based on a position of a corresponding unit pixel from a center of the pixel array to an edge of the pixel array.
Abstract translation: 该技术提供了一种图像传感器和包括该图像传感器的电子设备。在包括多个单位像素的像素阵列的图像传感器中,多个单位像素中的每一个可以包括光电转换元件和光电转换后的像素透镜 并且包括多个聚光层,其中下层具有比上层更大的面积,其中像素透镜具有基于从像素阵列的中心到边缘的相应单位像素的位置而变化的形状 的像素阵列。
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公开(公告)号:US20170179174A1
公开(公告)日:2017-06-22
申请号:US15446775
申请日:2017-03-01
Applicant: SK hynix Inc.
Inventor: Yun-Hui YANG , Pyong-Su KWAG , Young-Jun KWON , Min-Ki NA , Sung-Kun PARK , Donghyun WOO , Cha-Young LEE , Ho-Ryeong LEE
IPC: H01L27/146 , H01L29/78 , H01L29/04 , H01L29/51 , H01L29/16
CPC classification number: H01L27/14614 , H01L27/14609 , H01L27/1461 , H01L27/14616 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H01L29/04 , H01L29/16 , H01L29/511 , H01L29/7827
Abstract: An image sensor includes a photoelectric conversion element, including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.
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公开(公告)号:US20160071894A1
公开(公告)日:2016-03-10
申请号:US14818829
申请日:2015-08-05
Applicant: SK hynix Inc.
Inventor: Won-Jun LEE , Kyoung-In LEE , Cha-Young LEE
CPC classification number: H01L27/14621 , H01L27/1462 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H04N9/04
Abstract: Disclosed are an image sensor including a light collection member having a multi-layer step shape and an electronic device including the same. This technology can improve light condensing efficiency in a unit pixel since a corresponding pixel lens is included. Furthermore, light condensing efficiency in a unit pixel can be improved more effectively by controlling the width of a corresponding pixel lens so that the pixel lens corresponds to the wavelength of incident light whose color has been separated by a corresponding color filter. As described above, quantum efficiency in the photoelectric conversion element can also be improved since light condensing efficiency in a unit pixel is improved. As a result, performance of the image sensor can be improved.
Abstract translation: 公开了一种图像传感器,其包括具有多层台阶形状的光收集构件和包括其的电子设备。 该技术可以提高单位像素中的聚光效率,因为包括相应的像素透镜。 此外,通过控制相应的像素透镜的宽度,可以更有效地提高单位像素中的聚光效率,使得像素透镜对应于颜色已经被相应的滤色器分离的入射光的波长。 如上所述,由于单位像素中的聚光效率提高,所以光电转换元件的量子效率也可以提高。 结果,可以提高图像传感器的性能。
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公开(公告)号:US20180130837A1
公开(公告)日:2018-05-10
申请号:US15599607
申请日:2017-05-19
Applicant: SK hynix Inc.
Inventor: Cha-Young LEE , Sung-Wook CHO
IPC: H01L27/146 , H01L27/148
Abstract: An image sensor may include a pixel array. The pixel array may include a plurality of sub pixel arrays arranged two-dimensionally, wherein each of the plurality of sub pixel arrays Including a plurality of pixel blocks arranged in an M×N (where M and N are natural numbers) matrix structure, and an (M,N+1) pixel block has a planar configuration obtained by inverting a planar configuration of the (M,N) pixel block in an N direction. Each of the plurality of pixel blocks may include a light reception unit including a plurality of unit pixels which generate photocharges in response to incident light and are arranged in an m×n (where m and n are natural numbers) matrix structure to have a shared pixel structure; and a driving circuit suitable for outputting an image signal corresponding to the photocharges.
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公开(公告)号:US20170338264A1
公开(公告)日:2017-11-23
申请号:US15251998
申请日:2016-08-30
Applicant: SK hynix Inc.
Inventor: Pyong-Su KWAG , Young-Jun KWON , Cha-Young LEE
IPC: H01L27/146 , H01L29/423 , H01L29/786 , H04N5/378
CPC classification number: H01L27/14614 , H01L27/1421 , H01L27/14627 , H01L27/14638 , H01L27/1464 , H01L29/4236 , H01L29/78675 , H04N5/378
Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.
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公开(公告)号:US20190115381A1
公开(公告)日:2019-04-18
申请号:US16217963
申请日:2018-12-12
Applicant: SK hynix Inc.
Inventor: Pyong-Su KWAG , Young-Jun KWON , Cha-Young LEE
IPC: H01L27/146 , H01L29/786 , H04N5/378 , H01L29/423
CPC classification number: H01L27/14614 , H01L27/1421 , H01L27/14627 , H01L27/14638 , H01L27/1464 , H01L29/4236 , H01L29/78675 , H04N5/378
Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.
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公开(公告)号:US20180269238A1
公开(公告)日:2018-09-20
申请号:US15716586
申请日:2017-09-27
Applicant: SK hynix Inc.
Inventor: Cha-Young LEE
IPC: H01L27/146
CPC classification number: H01L27/14601 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H01L27/307
Abstract: An image sensor may include: a pixel array having a plurality of pixels arranged in a matrix structure; and an image array including a plurality of image dots which are arranged in a matrix structure, and implemented by output signals of the respective pixels. The position of a first pixel in the pixel array may not correspond to the position of an image dot corresponding to the first pixel in the image array, and the position of a second pixel adjacent to the first pixel in the pixel array may correspond to the position of an image dot corresponding to the second pixel in the image array.
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公开(公告)号:US20180138229A1
公开(公告)日:2018-05-17
申请号:US15607110
申请日:2017-05-26
Applicant: SK hynix Inc.
Inventor: Cha-Young LEE
IPC: H01L27/146
CPC classification number: H01L27/14641 , H01L27/14621
Abstract: An image sensor may include a pixel array that includes a plurality of pixel blocks arranged in an M×N (where M and N are natural numbers) matrix structure, wherein, among the plurality of pixel blocks, when compared to any one pixel block as a first pixel block, any one pixel block as a second pixel block adjacent to the first pixel block in an M direction or an N direction has a planar shape that is obtained by inverting a planar shape of the first pixel block in the M direction. Each of the plurality of pixel blocks may include a light reception unit including a plurality of unit pixels which generate photocharges in response to incident light and are arranged in an m×n matrix structure to have a shared pixel structure; and a driving circuit suitable for outputting an image signal corresponding to the photocharges.
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