Enable signal generation circuit and semiconductor apparatus using the same

    公开(公告)号:US10943629B2

    公开(公告)日:2021-03-09

    申请号:US16730206

    申请日:2019-12-30

    申请人: SK hynix Inc.

    摘要: A semiconductor apparatus includes a command decoding circuit and an enable signal generation circuit. The command decoding circuit generates a plurality of operation codes and a strobe pulse based on a command signal and a clock signal. The enable signal generation circuit generates a seed signal based on at least a part of an operation code, among the plurality of operation codes, and the strobe pulse, and generates an enable signal by shifting the seed signal. The enable signal generation circuit generates a plurality of guard keys, after the seed signal is generated, based on the plurality of operation codes and the strobe pulse, and prevents the generation of the enable signal when any one of the plurality of guard keys is disabled.

    Power gating system
    2.
    发明授权

    公开(公告)号:US10725495B2

    公开(公告)日:2020-07-28

    申请号:US16507516

    申请日:2019-07-10

    申请人: Sk hynix Inc.

    摘要: A power gating system includes a logic circuit region including at least one logic gate configured to receive a first gating clock signal. The power gating system also includes a power gating control circuit configured to generate the first gating clock signal which is controlled to start transition after stabilization of an internal power voltage according to a chip select signal, a command/address signal, and an external clock signal.

    Circuits for setting reference voltages and semiconductor devices including the same

    公开(公告)号:US10133284B2

    公开(公告)日:2018-11-20

    申请号:US15694336

    申请日:2017-09-01

    申请人: SK hynix Inc.

    IPC分类号: G05F3/02 G05F1/10 G11C5/14

    摘要: A circuit for setting a reference voltage is provided. The circuit includes a reference voltage information storage unit and a reference voltage input/output (I/O) control unit. The reference voltage information storage unit is configured to set a level of a reference voltage according to information stored in a first register or a second register if a training operation starts in a first set mode. The reference voltage I/O control unit is configured to set a level of the reference voltage according to first data or second data if the training operation starts in a second set mode.

    Semiconductor devices
    4.
    发明授权

    公开(公告)号:US10734042B2

    公开(公告)日:2020-08-04

    申请号:US16506648

    申请日:2019-07-09

    申请人: SK hynix Inc.

    IPC分类号: G11C7/22 G11C7/10

    摘要: A semiconductor device includes an input/output (I/O) control signal generation circuit, a pipe circuit and an auto-pre-charge signal generation circuit. The I/O control signal generation circuit generates an input control signal, an output control signal and an internal output control signal. The pipe circuit latches an internal command/address signal based on the input control signal and outputs the latched internal command/address signal as a latch signal. The auto-pre-charge signal generation circuit generates an auto-pre-charge signal from the latch signal and the internal latch signal.

    Circuits for setting reference voltages and semiconductor devices including the same

    公开(公告)号:US09785158B2

    公开(公告)日:2017-10-10

    申请号:US15041258

    申请日:2016-02-11

    申请人: SK hynix Inc.

    IPC分类号: G05F3/02 G05F1/10 G11C5/14

    CPC分类号: G05F1/10 G11C5/147

    摘要: A circuit for setting a reference voltage is provided. The circuit includes a reference voltage information storage unit and a reference voltage input/output (I/O) control unit. The reference voltage information storage unit is configured to set a level of a reference voltage according to information stored in a first register or a second register if a training operation starts in a first set mode. The reference voltage I/O control unit is configured to set a level of the reference voltage according to first data or second data if the training operation starts in a second set mode.

    Semiconductor devices
    7.
    发明授权

    公开(公告)号:US10762935B2

    公开(公告)日:2020-09-01

    申请号:US16400680

    申请日:2019-05-01

    申请人: SK hynix Inc.

    IPC分类号: G11C7/00 G11C7/12 G11C7/22

    摘要: A semiconductor device includes a burst end signal generation circuit and an auto-pre-charge control circuit. The burst end signal generation circuit generates a write burst end signal based on a write flag and a latched burst mode signal in a first burst mode and generates the write burst end signal based on an internal write flag and an internal latched burst mode signal in a second burst mode. The auto-pre-charge control circuit performs an auto-pre-charge operation based on the write burst end signal.

    Semiconductor apparatus for performing clock phase synchronization, and an operating method thereof and semiconductor system using the same

    公开(公告)号:US10523215B2

    公开(公告)日:2019-12-31

    申请号:US16012453

    申请日:2018-06-19

    申请人: SK hynix Inc.

    摘要: A semiconductor apparatus may include a synchronization circuit, and a phase detection circuit. The synchronization circuit may be configured to, based on an operation mode of the semiconductor apparatus, divide a first clock signal to generate first and second divided clock signals or divide a phase-locked clock signal to generate first and second divided clock signals. The phase detection circuit may be configured to use, based on the operation mode of the semiconductor apparatus, either the first and second clock signals created from dividing the first clock signal or the first and second clock signals created from dividing the phase-locked clock signal, to compare either the first divided clock signal or the second divided clock signal with a second clock signal to generate a phase detection signal.

    Devices adjusting a level of an active voltage supplied in a refresh operation

    公开(公告)号:US11315621B2

    公开(公告)日:2022-04-26

    申请号:US17009329

    申请日:2020-09-01

    申请人: SK hynix Inc.

    摘要: A device includes an operation control circuit and a drive control signal generation circuit. The operation control circuit generates an internal refresh signal that is activated to perform an active operation for a cell array, the cell array being coupled to a word line that is selected by a row address based on a refresh signal that is activated to perform a refresh operation. In addition, the operation control circuit generates a pre-refresh pulse based on the refresh signal and generates a refresh end pulse based on the internal refresh signal. The drive control signal generation circuit generates a drive control signal to control a drive of an active voltage that is supplied to the word line that is selected by the row address based on the internal refresh signal, the pre-refresh pulse, and the refresh end pulse.