公开(公告)号：US10728479B2

公开(公告)日：2020-07-28

申请号：US16204210

申请日：2018-11-29

Applicant: SK hynix Inc.

Inventor： Won Jun Lee ,  Bo Kwang Hwang

IPC: H04N5/369 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensing device is provided to provide a same effect as in performing testing associated with different integration or exposure times without changing an exposure or integration time. The image sensing device includes an active pixel region configured to include a plurality of active pixels, a dummy pixel region located at an outer wall of the active pixel region, configured to include a plurality of dummy pixels, and a light quantity control pattern configured to allow different quantities of light to be incident upon the respective dummy pixels.

公开(公告)号：US20210368127A1

公开(公告)日：2021-11-25

申请号：US17080712

申请日：2020-10-26

Applicant: SK hynix Inc.

Inventor： Won Jun Lee

IPC: H04N5/3745 ,  H04N5/374

Abstract: An image sensing device includes a Bayer pixel group configured include pixels that form a Bayer pattern and are arranged in a 2×2 matrix, a 4SUM pixel group configured to include pixels that correspond to the same colors and are arranged in a 2×2 matrix, a Bayer floating diffusion disposed at a center portion of the Bayer pixel group, a 4SUM floating diffusion (FD) region disposed at a center portion of the 4SUM pixel group, a sensing node, and a gain conversion transistor coupled between the sensing node and any one of the Bayer floating diffusion (FD) region and the 4SUM floating diffusion (FD) region.

公开(公告)号：US09673242B2

公开(公告)日：2017-06-06

申请号：US14528687

申请日：2014-10-30

Applicant: SK hynix Inc. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Hae Wook Han ,  Young Woong Do ,  Won Jun Lee ,  Sang Dong Yoo ,  Kyoung In Lee ,  Cha Young Lee

IPC: H01L27/146 ,  H01L31/0232

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14645 ,  H01L31/0232

Abstract: An image sensor includes a color filter configured to pass a specific color of light; a micro lens formed under the color filter and configured with a plurality of layers in which an upper layer has a smaller area than a lower layer; and a photo device formed under the micro lens and configured to receive light passing through the micro lens and convert the received light into an electrical signal.

公开(公告)号：US12200382B2

公开(公告)日：2025-01-14

申请号：US17870720

申请日：2022-07-21

Applicant: SK hynix Inc.

Inventor： Won Jun Lee

IPC: H04N25/77 ,  H01L27/146 ,  H04N25/46

Abstract: An image sensing device may include one or more pixel groups arranged in rows and columns in an array, each pixel group being arranged at an intersection between a row and a column of the array, wherein each pixel group comprises one or more floating diffusion regions, and one or more groups of an odd number photoelectric conversion units structured to convert incident light to generate electrical charge, each group of the odd number of photoelectric conversion units electrically connected in common to one of the floating diffusion regions for receiving the generated electrical charge.

公开(公告)号：US11864394B2

公开(公告)日：2024-01-02

申请号：US17494534

申请日：2021-10-05

Applicant: SK hynix Inc.

Inventor： Beom Seok Lee ,  Won Jun Lee ,  Seok Man Hong

IPC: G11C11/00 ,  H10B63/00 ,  G11C13/00 ,  H10N70/20

CPC classification number: H10B63/84 ,  G11C13/004 ,  G11C13/0004 ,  G11C13/0069 ,  H10N70/231 ,  G11C2213/71

Abstract: A semiconductor device may include first row lines each extending in a first direction, column lines each extending in a second direction crossing the first direction, second row lines each extending in the first direction, a plurality of first memory cells respectively coupled between the first row lines and the column lines, each of the plurality of first memory cells including a first variable resistance layer and a first dielectric layer positioned between the first variable resistance layer and a corresponding one of the first row lines, and a plurality of second memory cells respectively coupled between the second row lines and the column lines, each of the plurality of second memory cells including a second variable resistance layer and a second dielectric layer positioned between the second variable resistance layer and a corresponding one of the second row lines.

公开(公告)号：US11330217B2

公开(公告)日：2022-05-10

申请号：US17080712

申请日：2020-10-26

Applicant: SK hynix Inc.

Inventor： Won Jun Lee

IPC: H04N5/3745 ,  H04N5/374 ,  H04N5/355

Abstract: An image sensing device includes a Bayer pixel group configured include pixels that form a Bayer pattern and are arranged in a 2×2 matrix, a 4SUM pixel group configured to include pixels that correspond to the same colors and are arranged in a 2×2 matrix, a Bayer floating diffusion disposed at a center portion of the Bayer pixel group, a 4SUM floating diffusion (FD) region disposed at a center portion of the 4SUM pixel group, a sensing node, and a gain conversion transistor coupled between the sensing node and any one of the Bayer floating diffusion (FD) region and the 4SUM floating diffusion (FD) region.

公开(公告)号：US08937342B1

公开(公告)日：2015-01-20

申请号：US14041744

申请日：2013-09-30

Applicant: SK Hynix Inc. ,  Postech Academy-Industry Foundation

Inventor： Do Hwan Kim ,  Su Hwan Lim ,  Hae Wook Han ,  Young Woong Do ,  Won Jun Lee

IPC: H01L27/148 ,  H01L27/14 ,  H01L31/0232 ,  H01L27/146 ,  H01L31/02 ,  H01L21/00

CPC classification number: H01L27/14625 ,  H01L27/14621 ,  H01L27/14623

Abstract: A CMOS image sensor includes an active pixel structure suitable for sensing light incident from outside and converting a sensed light into an electrical signal, and an optical block structure suitable for blocking a visible light and passing a UV light to check and evaluate an electrical characteristic of the active pixel area. The UV pass filter includes first and second insulation layers comprising an insulator, and a metal layer formed between the first and second insulation layers.

Abstract translation: CMOS图像传感器包括适于感测从外部入射的光并将感测到的光转换成电信号的有源像素结构，以及适于阻挡可见光并通过UV光以检查和评估电气特性的光学块结构 有源像素区域。 UV通过滤光器包括包含绝缘体的第一和第二绝缘层以及形成在第一和第二绝缘层之间的金属层。