Abstract:
Envelope tracking power amplifiers with advanced gain shaping are provided. In certain implementations, a power amplifier system includes a power amplifier that amplifies a radio frequency (RF) signal and an envelope tracker that controls a voltage level of a supply voltage of the power amplifier based on an envelope of the RF signal. The power amplifier system further includes a gain shaping circuit that generates a gain shaping current that changes with the voltage level of the supply voltage from the envelope tracker. For example, the gain shaping circuit can include an analog look-up table (LUT) mapping a particular voltage level of the supply voltage to a particular current level of gain shaping current. Additionally, the gain shaping circuit biases the power amplifier based on the gain shaping current.
Abstract:
Systems and methods are provided herein that include an amplifier arrangement and a balun arrangement that accommodate two or more frequency bands using various common components that are operated and/or coupled in differing ways based upon which frequency band is in operation.
Abstract:
Aspects of this disclosure relate to efficient power amplifiers, such as class-F power amplifiers. A power amplifier transistor can provide an amplified RF signal. A termination can be coupled to an output of the power amplifier transistor and configured to provide a short circuit at a second harmonic. In some instances, the termination circuit can provide an open circuit at a third harmonic. A resonant circuit can be coupled to the output terminal of the power amplifier transistor and configured to provide an open circuit at the third harmonic. In certain embodiments, an input termination circuit coupled to an input terminal of the power amplifier transistor can provide a short circuit at the second harmonic. The power amplifiers of this disclosure can be implemented, for example, in envelope tracking applications.
Abstract:
Envelope tracking power amplifiers with advanced gain shaping are provided. In certain implementations, a power amplifier system includes a power amplifier that amplifies a radio frequency (RF) signal and an envelope tracker that controls a voltage level of a supply voltage of the power amplifier based on an envelope of the RF signal. The power amplifier system further includes a gain shaping circuit that generates a gain shaping current that changes with the voltage level of the supply voltage from the envelope tracker. For example, the gain shaping circuit can include an analog look-up table (LUT) mapping a particular voltage level of the supply voltage to a particular current level of gain shaping current. Additionally, the gain shaping circuit biases the power amplifier based on the gain shaping current.
Abstract:
Feedback circuit for power amplifier. In some embodiments, a radio-frequency amplifier can include a bipolar junction transistor configured to amplify a signal, and having an input and an output. The radio-frequency amplifier can further include a feedback circuit implemented between the output and input of the bipolar junction transistor. The feedback circuit can include a parallel assembly of a field-effect transistor and a resistive element such that the resistive element is bypassed when the field-effect transistor is ON and an overall resistance of the feedback circuit includes the resistive element when the field-effect transistor is OFF. Such a feedback circuit can be configured to be capable of providing a plurality of resistance values between the output and input of the bipolar junction transistor to facilitate different gains of the bipolar junction transistor.
Abstract:
Aspects of this disclosure relate to efficient power amplifiers, such as class-F power amplifiers. A power amplifier transistor can provide an amplified RF signal. A termination can be coupled to an output of the power amplifier transistor and configured to provide a short circuit at a second harmonic. In some instances, the termination circuit can provide an open circuit at a third harmonic. A resonant circuit can be coupled to the output terminal of the power amplifier transistor and configured to provide an open circuit at the third harmonic. In certain embodiments, an input termination circuit coupled to an input terminal of the power amplifier transistor can provide a short circuit at the second harmonic. The power amplifiers of this disclosure can be implemented, for example, in envelope tracking applications.
Abstract:
Apparatus and methods for power amplifier output matching is disclosed. In one aspect, there is provided an output matching circuit including an input configured to receive an amplified radio frequency signal from a power amplifier, a first output, and a second output. The output matching circuit further includes a first matching circuit electrically connected between the input of the output matching circuit and the first output, the first matching circuit configured to suppress harmonics of a fundamental frequency of the amplified radio frequency signal when the amplified radio frequency signal is within a first band. The output matching circuit further includes a second matching circuit electrically connected between the input of the output matching circuit and the second output, the second matching circuit configured to suppress harmonics of the fundamental frequency of the amplified radio frequency signal when the amplified radio frequency signal is within a second band different from the first band.
Abstract:
Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.
Abstract:
Apparatus and methods for power amplifier output matching is disclosed. In one aspect, there is provided an output matching circuit including an input configured to receive an amplified radio frequency signal from a power amplifier, a first output, and a second output. The output matching circuit further includes a first matching circuit electrically connected between the input of the output matching circuit and the first output, the first matching circuit configured to suppress harmonics of a fundamental frequency of the amplified radio frequency signal when the amplified radio frequency signal is within a first band. The output matching circuit further includes a second matching circuit electrically connected between the input of the output matching circuit and the second output, the second matching circuit configured to suppress harmonics of the fundamental frequency of the amplified radio frequency signal when the amplified radio frequency signal is within a second band different from the first band.
Abstract:
Switchable feedback circuit for radio-frequency (RF) power amplifiers. In some embodiments, an RF power amplifier (PA) circuit can include a transistor having a base, a collector, and an emitter. The transistor can be configured to amplify an RF signal. The RF PA circuit can further include a switchable feedback circuit implemented between the collector and the base. The switchable feedback circuit can be configured to provide a plurality of resistance values between the collector and the base. Such a PA circuit can be implemented in products such as a die, a module, and a wireless device.