公开(公告)号：US11466384B2

公开(公告)日：2022-10-11

申请号：US16736274

申请日：2020-01-07

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Derrick S. Kamber

IPC: C30B25/04 ,  C30B29/40 ,  C30B25/16 ,  C30B25/20

Abstract: A method for forming a laterally-grown group III metal nitride crystal includes providing a substrate, the substrate including one of sapphire, silicon carbide, gallium arsenide, silicon, germanium, a silicon-germanium alloy, MgAl2O4 spinel, ZnO, ZrB2, BP, InP, AlON, ScAlMgO4, YFeZnO4, MgO, Fe2NiO4, LiGa5O8, Na2MoO4, Na2WO4, In2CdO4, lithium aluminate (LiAlO2), LiGaO2, Ca8La2(PO4)6O2, gallium nitride, or aluminum nitride (AlN), forming a pattern on the substrate, the pattern comprising growth centers having a minimum dimension between 1 micrometer and 100 micrometers, and being characterized by at least one pitch dimension between 20 micrometers and 5 millimeters, growing a group III metal nitride from the pattern of growth centers vertically and laterally, and removing the laterally-grown group III metal nitride layer from the substrate. A laterally-grown group III metal nitride layer coalesces, leaving an air gap between the laterally-grown group III metal nitride layer and the substrate or a mask thereupon.

公开(公告)号：US10036099B2

公开(公告)日：2018-07-31

申请号：US14599335

申请日：2015-01-16

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Derrick S. Kamber ,  Bradley C. Downey

IPC: C30B7/10 ,  C30B29/40 ,  H01L21/02 ,  B01J3/00 ,  B01J3/04 ,  B01J3/06 ,  B30B11/00

CPC classification number: C30B7/105 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B29/406 ,  H01L21/02035 ,  H01L21/02389

Abstract: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

公开(公告)号：US11705322B2

公开(公告)日：2023-07-18

申请号：US16882219

申请日：2020-05-22

Applicant: SLT Technologies, Inc

Inventor： Wenkan Jiang ,  Mark P. D'Evelyn ,  Derrick S. Kamber ,  Dirk Ehrentraut ,  Jonathan D. Cook ,  James Wenger

IPC: C30B7/10 ,  C30B7/00 ,  C30B29/40 ,  H01L29/20 ,  H01L21/02 ,  C30B33/10 ,  H01L29/778 ,  H01L33/32

CPC classification number: H01L21/02005 ,  C30B7/005 ,  C30B7/105 ,  C30B29/406 ,  C30B33/10 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/7788 ,  H01L33/32

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：USRE47114E1

公开(公告)日：2018-11-06

申请号：US15469196

申请日：2017-03-24

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Derrick S. Kamber

IPC: C04B35/00 ,  C01B21/06 ,  C30B9/00 ,  C30B28/06 ,  C30B29/40 ,  C30B7/10

Abstract: A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

公开(公告)号：US10029955B1

公开(公告)日：2018-07-24

申请号：US13657551

申请日：2012-10-22

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Pakalapati Tirumala Rajeev ,  Douglas Wayne Pocius ,  Derrick S. Kamber ,  Michael Coulter

IPC: C30B7/10 ,  C30B19/08 ,  C07B33/00 ,  C30B35/00 ,  C30B29/38 ,  B01J21/06

Abstract: An improved capsule and method of use for processing materials or growing crystals in supercritical fluids is disclosed. The capsule is scalable up to very large volumes and provides for cost-effective processing. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of up to approximately 8 GPa and 1500° C., respectively.

公开(公告)号：US11453956B2

公开(公告)日：2022-09-27

申请号：US16550947

申请日：2019-08-26

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  James S. Speck ,  Derrick S. Kamber ,  Douglas W. Pocius

IPC: C30B33/06 ,  C30B7/10 ,  H01L21/02 ,  H01L29/20 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B19/06 ,  C30B19/12

Abstract: Techniques for processing materials in supercritical fluids including processing in a capsule disposed within a high-pressure apparatus enclosure are disclosed. The disclosed techniques are useful for growing crystals of GaN, AlN, InN, and their alloys, including InGaN, AlGaN, and AlInGaN for the manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation devices, photodetectors, integrated circuits, and transistors.

公开(公告)号：US11047041B2

公开(公告)日：2021-06-29

申请号：US16814813

申请日：2020-03-10

Applicant: SLT Technologies, Inc

Inventor： Douglas W. Pocius ,  Derrick S. Kamber ,  Mark P. D'Evelyn ,  Jonathan D. Cook

IPC: C23C16/30 ,  C23C16/44 ,  C30B7/10 ,  C30B29/40 ,  C23C16/01 ,  C01B21/06 ,  C23C16/448

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

公开(公告)号：US10604865B2

公开(公告)日：2020-03-31

申请号：US16019528

申请日：2018-06-26

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Derrick S. Kamber ,  Bradley C. Downey

IPC: C30B19/02 ,  C30B29/40 ,  C30B7/10 ,  C30B23/04 ,  C30B25/04

Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

公开(公告)号：US10145026B2

公开(公告)日：2018-12-04

申请号：US13908836

申请日：2013-06-03

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Derrick S. Kamber ,  Bradley C. Downey

IPC: C30B29/40 ,  C30B7/10

Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

公开(公告)号：US10094017B2

公开(公告)日：2018-10-09

申请号：US15011266

申请日：2016-01-29

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Douglas W. Pocius ,  Derrick S. Kamber ,  Mark P. D'Evelyn ,  Jonathan D. Cook

IPC: C23C16/30 ,  C23C16/44 ,  C30B7/10 ,  C30B29/40 ,  C23C16/01 ,  C01B21/06

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.