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公开(公告)号：US20220136128A1
公开(公告)日：2022-05-05
申请号：US17514656
申请日：2021-10-29
摘要： A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.
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公开(公告)号：US20210222317A1
公开(公告)日：2021-07-22
申请号：US17133002
申请日：2020-12-23
摘要： High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
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公开(公告)号：US20200283892A1
公开(公告)日：2020-09-10
申请号：US16814813
申请日：2020-03-10
摘要： A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.
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公开(公告)号：US20210249252A1
公开(公告)日：2021-08-12
申请号：US16882219
申请日：2020-05-22
发明人： Wenkan JIANG , Mark P. D'EVELYN , Derrick S. KAMBER , Dirk EHRENTRAUT , Jonathan D. COOK , James WENGER
摘要： Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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公开(公告)号：US20180371609A1
公开(公告)日：2018-12-27
申请号：US16023137
申请日：2018-06-29
摘要： A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.
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公开(公告)号：US20240240352A1
公开(公告)日：2024-07-18
申请号：US18434568
申请日：2024-02-06
CPC分类号： C30B7/105 , C30B29/403
摘要： A method for growth of group Ill metal nitride crystals includes providing one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group Ill metal nitride boule by an ammonothermal crystal growth process.
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公开(公告)号：US20230317444A1
公开(公告)日：2023-10-05
申请号：US18331719
申请日：2023-06-08
发明人： Wenkan JIANG , Mark P. D'EVELYN , Derrick S. KAMBER , Dirk EHRENTRAUT , Jonathan D. COOK , James WENGER
CPC分类号： H01L21/02005 , H01L21/02647 , H01L21/02642 , H01L21/0254 , C30B7/105 , C30B33/10 , C30B7/005 , C30B29/406 , H01L29/7788
摘要： Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.
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公开(公告)号：US20190161858A9
公开(公告)日：2019-05-30
申请号：US16023137
申请日：2018-06-29
摘要： A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.
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