Semiconductor integrated circuit device

    公开(公告)号:US10446540B2

    公开(公告)日:2019-10-15

    申请号:US16122666

    申请日:2018-09-05

    Applicant: SOCIONEXT INC.

    Inventor: Shiro Usami

    Abstract: Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal.

    Semiconductor integrated circuit device

    公开(公告)号:US10658355B2

    公开(公告)日:2020-05-19

    申请号:US16565380

    申请日:2019-09-09

    Applicant: SOCIONEXT INC.

    Inventor: Shiro Usami

    Abstract: Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal.

    Semiconductor integrated circuit device having an ESD protection circuit

    公开(公告)号:US10096593B2

    公开(公告)日:2018-10-09

    申请号:US15835340

    申请日:2017-12-07

    Applicant: Socionext Inc.

    Inventor: Shiro Usami

    Abstract: Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal.

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