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公开(公告)号：US20240229228A9
公开(公告)日：2024-07-11
申请号：US18548418
申请日：2022-03-04
CPC分类号： C23C14/547 , C23C14/0042 , C23C14/083 , C23C14/165 , C23C14/3407 , H01J37/3426 , H01J37/3476 , H01J2237/24585 , H01J2237/332
摘要： A method of depositing a layer on a piece by sputter deposition, a coater and a processor for controlling a coater in accordance with the method are provided. The method includes providing deposition of metallic and reactive species simultaneously on a piece for forming a layer under predetermined sputtering conditions, thereby providing a deposited layer on the piece comprising a metal compound. The deposited layer is subsequently irradiated and the optical transmittance is measured. A measured parameter related to the measured radiation is compared with one stored value of that parameter. The sputtering conditions are thereby adapted as a result of the comparison.
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公开(公告)号：US20200377994A1
公开(公告)日：2020-12-03
申请号：US16954934
申请日：2018-12-11
摘要： A sputtering target comprising a top coat including a composition of lithium cobalt oxide LiyCozOx. x is smaller than or equal to y+z, and the lithium cobalt oxide has an X-Ray diffraction pattern with a peak P2 at 44°±0.2° 2-theta. The X-Ray diffraction pattern is measured with an X-Ray diffractometer with CuKα1 radiation.
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公开(公告)号：US20240271270A1
公开(公告)日：2024-08-15
申请号：US18567451
申请日：2022-07-15
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/14
摘要： A target for sputtering having target material for sputtering includes a lamellar structure and a porosity of at least 1% and having a resistivity lower than 1000 ohm·cm and further includes silicon and at least a further element from the group 13 and/or the group 15 of the periodic table. The amount of silicon is at least 98 wt. %, and the amount of the at least a further element is higher than 0.001 wt. % and lower than 0.03 wt. %. The amount does not include the amount of nitrogen if present. A manufacturing method and a sputtering method are also provided.
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公开(公告)号：US20230272519A1
公开(公告)日：2023-08-31
申请号：US18016078
申请日：2021-07-14
发明人： Wilmert DE BOSSCHER , Ignacio CARETTI GIANGASPRO , Jai Shankar SUBRAMANIAN , Jeffrey Dieter EDEL
CPC分类号： C23C14/3414 , C04B41/91 , C04B37/02 , C04B2235/94
摘要： A sputtering target includes at least one single piece with a length of at least 600 mm. The sputtering target has a backing structure provided with target material for sputtering. At least 40% of the mass of the target material includes a so-called target volatile material which shows, at pressures between 700 hPa and 1300 hPa, either a sublimation temperature, or decomposition temperature below its melting point or a melting temperature and an absolute boiling temperature being close to each other. The sputtering target has a target material density of at least 95% of the theoretical density of the target material. The sputtering target includes a bonding layer with a thickness of 0 to 500 μm between the backing structure and the target material.
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公开(公告)号：US20240133025A1
公开(公告)日：2024-04-25
申请号：US18548418
申请日：2022-03-04
CPC分类号： C23C14/547 , C23C14/0042 , C23C14/083 , C23C14/165 , C23C14/3407 , H01J37/3426 , H01J37/3476 , H01J2237/24585 , H01J2237/332
摘要： A method of depositing a layer on a piece by sputter deposition, a coater and a processor for controlling a coater in accordance with the method are provided. The method includes providing deposition of metallic and reactive species simultaneously on a piece for forming a layer under predetermined sputtering conditions, thereby providing a deposited layer on the piece comprising a metal compound. The deposited layer is subsequently irradiated and the optical transmittance is measured. A measured parameter related to the measured radiation is compared with one stored value of that parameter. The sputtering conditions are thereby adapted as a result of the comparison.
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公开(公告)号：US20220254613A1
公开(公告)日：2022-08-11
申请号：US17626244
申请日：2020-07-14
摘要： A movement system is provided for moving a non-flat substrate across a sputter flux distribution without circumferentially exposing the non-flat substrate to the sputter flux distribution. The movement system is arranged for a first movement of translationally transporting the non-flat substrate along the sputter flux distribution, and a second movement of translating and/or rotating the non-flat substrate with respect to the sputter flux distribution.
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公开(公告)号：US20210371970A1
公开(公告)日：2021-12-02
申请号：US17282110
申请日：2019-10-06
发明人： Wilmert DE BOSSCHER , Ignacio CARETTI GIANGASPRO , David Karel DEBRUYNE , Hubert ELIANO , Freddy FACK , Tom COTTENS
IPC分类号： C23C14/34
摘要： In a first aspect, the present invention relates to a planar sputtering target comprising a target material layer built up by a layering of splats, wherein the target material layer has a layer width and has a microstructure which varies across the layer width. In a second aspect, the present invention relates to a method for manufacturing such a planar sputtering target.
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公开(公告)号：US20240229226A9
公开(公告)日：2024-07-11
申请号：US18548404
申请日：2022-03-04
IPC分类号： C23C14/34 , C04B35/495 , C23C14/08 , H01J37/34
CPC分类号： C23C14/3414 , C04B35/495 , C23C14/083 , H01J37/3426 , C04B2235/3201 , C04B2235/3258 , C04B2235/326 , C04B2235/3279 , C04B2235/404 , H01J2237/332
摘要： A target for sputtering, use of the target and method of manufacture of the target is provided. The target has a single piece target material for sputter deposition, with at least 1 mm thickness of material for sputtering, having a lamellar structure and comprising a metal oxide with at least 50 wt. % or more of tungsten oxide. The atomic ratio of oxygen over tungsten results in a compound with oxygen deficiency with respect to the stoichiometric tungsten oxide. The method includes spraying metallic tungsten and/or tungsten oxide powder in amounts so as to provide a layer of material for sputtering being at least 1 mm thick and comprising non-stoichiometric tungsten oxide.
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公开(公告)号：US20240133024A1
公开(公告)日：2024-04-25
申请号：US18548404
申请日：2022-03-04
IPC分类号： C23C14/34 , C04B35/495 , C23C14/08 , H01J37/34
CPC分类号： C23C14/3414 , C04B35/495 , C23C14/083 , H01J37/3426 , C04B2235/3201 , C04B2235/3258 , C04B2235/326 , C04B2235/3279 , C04B2235/404 , H01J2237/332
摘要： A target for sputtering, use of the target and method of manufacture of the target is provided. The target has a single piece target material for sputter deposition, with at least 1 mm thickness of material for sputtering, having a lamellar structure and comprising a metal oxide with at least 50 wt. % or more of tungsten oxide. The atomic ratio of oxygen over tungsten results in a compound with oxygen deficiency with respect to the stoichiometric tungsten oxide. The method includes spraying metallic tungsten and/or tungsten oxide powder in amounts so as to provide a layer of material for sputtering being at least 1 mm thick and comprising non-stoichiometric tungsten oxide.
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公开(公告)号：US20230272520A1
公开(公告)日：2023-08-31
申请号：US18016114
申请日：2021-07-14
发明人： Wilmert DE BOSSCHER , Ignacio CARETTI GIANGASPRO , Jai Shankar SUBRAMANIAN , Jeffrey Dieter EDEL
IPC分类号： C23C14/34 , C04B35/457 , C04B35/495 , C23C4/11 , H01J37/34
CPC分类号： C23C14/3414 , C04B35/457 , C04B35/495 , C23C4/11 , H01J37/3426 , H01J37/3491 , C04B2235/3258 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293
摘要： A method of manufacturing a sputtering target includes the steps of providing a backing structure, providing target material comprising ceramic target material for spraying, subsequently thermal spraying the target material over the backing structure thus providing a target product where at least 40% in mass, for example at least 50% in mass, of the target material including a ceramic target material, and subsequently performing hot isostatic pressing on the target product thus increasing the density of the target material.
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