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    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS
    3.
    发明申请
    SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS 有权
    固态成像装置及其制造方法及电子设备

    公开(公告)号：US20160268322A1

    公开(公告)日：2016-09-15

    申请号：US15029717

    申请日：2014-10-14

    Applicant: SONY CORPORATION

    Inventor： Taiichiro WATANABE ,  Fumihiko KOGA

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/14607 ,  H01L27/14614 ,  H01L27/14641 ,  H01L27/14689

    Abstract: There is provided a solid state imaging device including a pixel including a photoelectric conversion unit that generates and accumulates a charge according to a received light amount, a charge accumulation unit that accumulates the generated charge, a first transfer transistor that transfers the charge of the photoelectric conversion unit to the charge accumulation unit, a charge holding unit that holds the charge to read out as a signal, and a second transfer transistor that transfers the charge of the charge accumulation unit to the charge holding unit, in which a gate electrode of the first transfer transistor is formed to be buried up to a predetermined depth from a semiconductor substrate interface, and the charge accumulation unit is formed in a longitudinally long shape to be extended in a depth direction along a side wall of the gate electrode of the first transfer transistor to be buried therein.

    Abstract translation: 提供了一种固态成像装置，其包括：像素，包括根据接收的光量产生并累积电荷的光电转换单元;累积所产生的电荷的电荷累积单元;传送光电二极管的电荷的第一转移晶体管; 转换单元到电荷累积单元，电荷保持单元，其保持作为信号读出的电荷;以及第二传输晶体管，其将电荷累积单元的电荷传送到电荷保持单元，其中栅极电极 第一传输晶体管被形成为从半导体衬底界面掩埋到预定深度，并且电荷累积单元形成为沿着第一传输的栅电极​​的侧壁在深度方向上延伸的纵向长形状 晶体管被埋在其中。

    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20190006411A1

    公开(公告)日：2019-01-03

    申请号：US16104802

    申请日：2018-08-17

    Applicant: SONY CORPORATION

    Inventor： Taiichiro WATANABE ,  Ryosuke NAKAMURA ,  Yusuke SATO ,  Fumihiko KOGA

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/359

    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.

    SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210233948A1

    公开(公告)日：2021-07-29

    申请号：US17053216

    申请日：2019-04-19

    Applicant: SONY CORPORATION

    Inventor： Masahiro JOEI ,  Kenichi MURATA ,  Fumihiko KOGA ,  Iwao YAGI ,  Shintarou HIRATA ,  Hideaki TOGASHI ,  Yosuke SAITO

    IPC: H01L27/146 ,  H01L27/30 ,  H01L29/41 ,  H04N5/3745

    Abstract: A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.

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