公开(公告)号：US20180294315A1

公开(公告)日：2018-10-11

申请号：US15765316

申请日：2016-08-16

Applicant: SONY CORPORATION

Inventor： Michinori SHIOMI ,  Syuuiti TAKIZAWA ,  Takeru BESSHO ,  Hideki ONO ,  Yosuke SAITO ,  Yoshiaki OBANA ,  Daisuke HOBARA

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L27/146 ,  H01L27/14665 ,  H01L51/441 ,  H01L51/447 ,  Y02E10/549

Abstract: A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

公开(公告)号：US20160164104A1

公开(公告)日：2016-06-09

申请号：US14905135

申请日：2014-05-20

Applicant: SONY CORPORATION

Inventor： Shun YAMANOI ,  Seiichiro TABATA ,  Hironori IIDA ,  Kenji KISHIMOTO ,  Yosuke SAITO ,  Shinichiro YAMADA ,  Kazumasa TAKESHI ,  Koichiro HINOKUMA

IPC: H01M4/66 ,  H01M10/052 ,  H01M4/38

CPC classification number: H01M4/663 ,  H01M4/13 ,  H01M4/139 ,  H01M4/38 ,  H01M4/583 ,  H01M4/625 ,  H01M10/052

Abstract: An electrode material for a secondary cell includes a porous carbon material having an absolute value of a differential value of a mass using a temperature as a parameter exceeding 0 at 360° C. and being 0.016 or more at 290° C. provided by thermally analyzing a mixture of the porous carbon material and S8 sulfur at a mass ratio of 1:2.

Abstract translation: 二次电池用电极材料包括使用在360℃下作为参数超过0的温度的绝对值为质量的绝对值的多孔碳材料，并且通过热分析提供的在290℃下为0.016以上的多孔碳材料 多孔碳材料与S8硫的质量比为1:2的混合物。

公开(公告)号：US20220285630A1

公开(公告)日：2022-09-08

申请号：US17744916

申请日：2022-05-16

Applicant: Sony Corporation ,  Sony Semiconductor Solutions Corporation

Inventor： Yosuke SAITO ,  Ichiro TAKEMURA ,  Osamu ENOKI ,  Yuki NEGISHI ,  Yuta HASEGAWA ,  Hideaki MOGI ,  Yasuharu UJIIE

IPC: H01L51/00 ,  C07D495/04

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

公开(公告)号：US20210280639A1

公开(公告)日：2021-09-09

申请号：US17261215

申请日：2019-07-25

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Shinnosuke HATTORI ,  Hajime KOBAYASHI ,  Sae MIYAJI ,  Masato KANNO ,  Miki KIMIJIMA ,  Yuta HASEGAWA ,  Toshio NISHI ,  Takashi KAWASHIMA ,  Yosuke SAITO ,  Yuta INABA

IPC: H01L27/30 ,  H01L51/44 ,  H01L27/146

Abstract: To provide a photoelectric conversion element capable of further improving performance in a photoelectric conversion element using an organic semiconductor material. The photoelectric conversion element includes a first electrode and a second electrode arranged to face each other, and a photoelectric conversion layer 17 provided between the first electrode and the second electrode, in which the photoelectric conversion layer 17 includes a first organic semiconductor material and a second organic semiconductor material, and at least one of the first organic semiconductor material or the second organic semiconductor material is an organic molecule having a HOMO volume fraction of 0.15 or less or a LUMO volume fraction of 0.15 or less.

公开(公告)号：US20210265428A1

公开(公告)日：2021-08-26

申请号：US17262264

申请日：2019-07-30

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yosuke SAITO ,  Masashi BANDO ,  Yukio KANEDA ,  Yoshiyuki HIRANO ,  Toshiki MORIWAKI

IPC: H01L27/30 ,  H01L27/28 ,  H01L51/42 ,  H01L51/44

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.

公开(公告)号：US20210249474A1

公开(公告)日：2021-08-12

申请号：US16973272

申请日：2019-06-11

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Hideaki TOGASHI ,  Iwao YAGI ,  Masahiro JOEI ,  Fumihiko KOGA ,  Kenichi MURATA ,  Shintarou HIRATA ,  Yosuke SAITO ,  Akira FURUKAWA

IPC: H01L27/30

Abstract: There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor including a stacked structure that includes a semiconductor substrate, a first photoelectric converter provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode, a photoelectric conversion film, and a readout electrode are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry.

公开(公告)号：US20210313381A1

公开(公告)日：2021-10-07

申请号：US17261221

申请日：2019-07-25

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Kenichi MURATA ,  Masahiro JOEI ,  Fumihiko KOGA ,  Iwao YAGI ,  Shintarou HIRATA ,  Hideaki TOGASHI ,  Yosuke SAITO ,  Shingo TAKAHASHI

IPC: H01L27/146 ,  H04N5/374

Abstract: Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film. The lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate.

公开(公告)号：US20210233948A1

公开(公告)日：2021-07-29

申请号：US17053216

申请日：2019-04-19

Applicant: SONY CORPORATION

Inventor： Masahiro JOEI ,  Kenichi MURATA ,  Fumihiko KOGA ,  Iwao YAGI ,  Shintarou HIRATA ,  Hideaki TOGASHI ,  Yosuke SAITO

IPC: H01L27/146 ,  H01L27/30 ,  H01L29/41 ,  H04N5/3745

Abstract: A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.

公开(公告)号：US20210057649A1

公开(公告)日：2021-02-25

申请号：US17045855

申请日：2019-04-04

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Osamu ENOKI ,  Yuki NEGISHI ,  Yuta HASEGAWA ,  Iwao YAGI ,  Yasuharu UJIIE ,  Yosuke SAITO

IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42 ,  H01L51/44

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer disposed to be opposed to and between the first electrode and the second electrode, in which the photoelectric conversion layer includes a first compound represented by the general formula and a second compound having a skeleton different from the first compound.

公开(公告)号：US20200274077A1

公开(公告)日：2020-08-27

申请号：US16761578

申请日：2018-10-30

Applicant: SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Yasuharu UJIIE ,  Yosuke SAITO ,  Yuta HASEGAWA ,  Hideaki MOGI ,  Osamu ENOKI ,  Yuki NEGISHI

IPC: H01L51/00 ,  H01L27/30 ,  H01L27/28 ,  H01L51/42 ,  H01L51/44 ,  C07D495/04

Abstract: A photoelectric conversion element of the present disclosure includes: a first electrode: a second electrode opposed to the first electrode; and an organic layer provided between the first electrode and the second electrode, and including an organic photoelectric conversion layer, and at least one layer included in the organic layer is formed including at least one kind of organic semiconductor material represented by a general expression (1).