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    SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
    固态成像装置及其制造方法及电子装置

    公开(公告)号：US20160112614A1

    公开(公告)日：2016-04-21

    申请号：US14891947

    申请日：2014-06-20

    Applicant: SONY CORPORATION

    Inventor： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

    IPC: H04N5/225

    CPC classification number: H04N5/2254 ,  G02B1/118 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L31/02327 ,  H01L31/10 ,  H04N5/359 ,  H04N5/369 ,  H04N5/3696 ,  H04N5/374 ,  H04N9/04

    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

    Abstract translation: 本公开内容涉及固态成像装置，其制造方法以及能够在抑制混色劣化的同时提高灵敏度的电子装置。 固态成像装置包括具有设置在二维布置的每个像素的光电转换区域的受光面侧的边界面上的飞蛾眼结构的防反射部， 阻挡部分设置在防反射部分的边界表面下方以阻挡入射光。 另外，光电转换区域是半导体区域，并且像素间阻挡部分具有通过在像素边界沿深度方向挖掘半导体区域而获得的沟槽结构。 根据本公开的技术可以应用于例如后表面照射型的固态成像装置。

    SOLID-STATE IMAGING DEVICE AND METHOD FOR PRODUCING THE SAME, AND ELECTRONIC APPARATUS
    9.
    发明申请
    SOLID-STATE IMAGING DEVICE AND METHOD FOR PRODUCING THE SAME, AND ELECTRONIC APPARATUS 审中-公开
    固态成像装置及其制造方法以及电子装置

    公开(公告)号：US20160301885A1

    公开(公告)日：2016-10-13

    申请号：US14778548

    申请日：2014-03-12

    Applicant: SONY CORPORATION

    Inventor： Yoshiaki MASUDA ,  Kazufumi WATANABE ,  Kyohei MIZUTA ,  Keishi INOUE ,  Hirohisa UCHIDA

    IPC: H04N5/374 ,  H01L27/146

    CPC classification number: H04N5/374 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

    Abstract: Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.

    Abstract translation: 提供一种固态成像装置，包括：有源像素区域，有效像素布置在有效像素区域中; 在有效像素区域周围的互连区域，在互连区域中设置电极或互连件; 互连区域外的周边区域; 以及在基板上形成的膜。 有效像素区域中的膜的横截面高度小于互连区域中的膜的横截面高度，并且膜的周边区域的截面高度和截面高度 在有效像素区域和互连区域之间的中间区域的至少一部分中，更靠近互连区域的部分在有效像素区域中的膜的横截面高度与横截面高度之间 的电影在互连区域。

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