Abstract:
There is provided an image sensor including a pixel unit, the pixel unit including a photodiode, a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.
Abstract:
A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
Abstract:
There is provided an image sensor including a pixel unit, the pixel unit including a photodiode, a first color filter and a second color filter each disposed in a different position on a plane above the photodiode, and a first on-chip lens disposed over the first color filter and a second on-chip lens disposed over the second color filter.
Abstract:
An information processing apparatus includes: multiple optical propagation paths configured to propagate light; a photoelectric conversion element configured to perform photoelectric conversion on light propagated through each of the multiple optical propagation paths at mutually different partial areas in a photoelectric conversion area; and an estimating unit configured to estimate illuminance or color temperature to be obtained at the photoelectric conversion element, using an electric signal corresponding to light propagated through each of the optical propagation paths.
Abstract:
An information processing apparatus includes: multiple optical propagation paths configured to propagate light; a photoelectric conversion element configured to perform photoelectric conversion on light propagated through each of the multiple optical propagation paths at mutually different partial areas in a photoelectric conversion area; and an estimating unit configured to estimate illuminance or color temperature to be obtained at the photoelectric conversion element, using an electric signal corresponding to light propagated through each of the optical propagation paths.
Abstract:
A signal processing circuit of a solid-state imaging element which processes a signal of the solid-state imaging element having a first pixel group and a second pixel group in which a charge accumulation time or photosensitivity is different by α times from that of the first pixel group, includes a calculation unit that multiplies a signal value of a pixel of interest in the first pixel group by α times, a weighting unit that performs weighting with respect to the signal value of the pixel of interest based on a signal value of a pixel associated with the pixel of interest, and a synthesis unit that synthesizes the signal value which has been multiplied by α times in the calculation unit and on which the weighting has been performed in the weighting unit and a signal value of a pixel of the second pixel group.
Abstract:
A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
Abstract:
The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.
Abstract:
The present technology relates to an imaging element, an electronic device, and a manufacturing method that make it possible to prevent color mixing in a pixel adjacent to a phase difference detection pixel and to make the light receiving sensitivity high or more. An anti-reflection film is formed only on the side wall of a light blocking unit that blocks part of the incident light on a photo diode of phase difference detection pixels for detecting the phase difference out of a plurality of pixels. Thereby, the light reflected at the side wall of the light blocking unit does not enter a photo diode of an adjacent pixel, and therefore color mixing is prevented. Furthermore, since the anti-reflection film is not formed on an interlayer layer, the light receiving sensitivity of the light that directly enters the photo diode is not reduced. The present technology can be applied to imaging elements.
Abstract:
The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs.