Information processing apparatus and method, and photoelectric conversion apparatus
    5.
    发明授权
    Information processing apparatus and method, and photoelectric conversion apparatus 有权
    信息处理装置和方法以及光电转换装置

    公开(公告)号:US09124753B2

    公开(公告)日:2015-09-01

    申请号:US13922014

    申请日:2013-06-19

    Inventor: Masashi Nakata

    CPC classification number: H04N9/045 H04N5/2351 H04N9/735 H04N2209/042

    Abstract: An information processing apparatus includes: multiple optical propagation paths configured to propagate light; a photoelectric conversion element configured to perform photoelectric conversion on light propagated through each of the multiple optical propagation paths at mutually different partial areas in a photoelectric conversion area; and an estimating unit configured to estimate illuminance or color temperature to be obtained at the photoelectric conversion element, using an electric signal corresponding to light propagated through each of the optical propagation paths.

    Abstract translation: 信息处理设备包括:多个光传播路径,被配置为传播光; 光电转换元件,被配置为对在光电转换区域中的相互不同的部分区域中通过所述多个光传播路径中的每一个传播的光进行光电转换; 以及估计单元,被配置为使用与通过每个光传播路径传播的光相对应的电信号来估计在光电转换元件处获得的照度或色温。

    Signal processing circuit of solid-state imaging element, signal processing method of solid-state imaging element, and electronic apparatus
    6.
    发明授权
    Signal processing circuit of solid-state imaging element, signal processing method of solid-state imaging element, and electronic apparatus 有权
    固态成像元件的信号处理电路,固态成像元件的信号处理方法和电子设备

    公开(公告)号:US09013626B2

    公开(公告)日:2015-04-21

    申请号:US13673241

    申请日:2012-11-09

    Inventor: Masashi Nakata

    CPC classification number: H04N5/335 H04N5/35554

    Abstract: A signal processing circuit of a solid-state imaging element which processes a signal of the solid-state imaging element having a first pixel group and a second pixel group in which a charge accumulation time or photosensitivity is different by α times from that of the first pixel group, includes a calculation unit that multiplies a signal value of a pixel of interest in the first pixel group by α times, a weighting unit that performs weighting with respect to the signal value of the pixel of interest based on a signal value of a pixel associated with the pixel of interest, and a synthesis unit that synthesizes the signal value which has been multiplied by α times in the calculation unit and on which the weighting has been performed in the weighting unit and a signal value of a pixel of the second pixel group.

    Abstract translation: 固态成像元件的信号处理电路,其处理具有第一像素组和第二像素组的固态成像元件的信号,其中电荷累积时间或光敏度与第一像素组的电荷累积时间或光敏度不同 像素组包括:计算单元,其将第一像素组中的感兴趣像素的信号值乘以α倍;对于感兴趣像素的信号值,基于a的信号值执行加权的加权单元 与所关注的像素相关联的像素,以及合成单元,其将在所述计算单元中已被乘以α倍的信号值合成,并且在所述加权单元中对所述加权单元进行了加权,并且所述第二 像素组。

    Image sensor and electronic apparatus

    公开(公告)号:US10367992B2

    公开(公告)日:2019-07-30

    申请号:US15815324

    申请日:2017-11-16

    Inventor: Masashi Nakata

    Abstract: The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.

    Imaging element, electronic device, and manufacturing method

    公开(公告)号:US10263024B2

    公开(公告)日:2019-04-16

    申请号:US14908201

    申请日:2015-05-27

    Inventor: Masashi Nakata

    Abstract: The present technology relates to an imaging element, an electronic device, and a manufacturing method that make it possible to prevent color mixing in a pixel adjacent to a phase difference detection pixel and to make the light receiving sensitivity high or more. An anti-reflection film is formed only on the side wall of a light blocking unit that blocks part of the incident light on a photo diode of phase difference detection pixels for detecting the phase difference out of a plurality of pixels. Thereby, the light reflected at the side wall of the light blocking unit does not enter a photo diode of an adjacent pixel, and therefore color mixing is prevented. Furthermore, since the anti-reflection film is not formed on an interlayer layer, the light receiving sensitivity of the light that directly enters the photo diode is not reduced. The present technology can be applied to imaging elements.

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