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    SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
    6.
    发明申请
    SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20170148833A1

    公开(公告)日：2017-05-25

    申请号：US15426691

    申请日：2017-02-07

    Applicant: SONY CORPORATION

    Inventor： Hideo KIDO ,  Takayuki ENOMOTO ,  Hideaki TOGASHI

    IPC: H01L27/146 ,  H04N5/378

    CPC classification number: H01L27/14614 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689 ,  H04N5/378

    Abstract: A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region.

    SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20190165023A1

    公开(公告)日：2019-05-30

    申请号：US16265634

    申请日：2019-02-01

    Applicant: SONY CORPORATION

    Inventor： Takayuki ENOMOTO ,  Yoshiki EBIKO

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves. A portion of the light shielding film is embedded in the embedded film that extends into the grooves.

    SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开

    公开(公告)号：US20170323918A1

    公开(公告)日：2017-11-09

    申请号：US15656873

    申请日：2017-07-21

    Applicant: SONY CORPORATION

    Inventor： Takayuki ENOMOTO ,  Yoshiki EBIKO

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A solid-state imaging device, method for producing solid-state imaging device and electronic apparatus are provided. The solid-state imaging device includes a substrate, with a plurality of pixels formed in the substrate. In addition, a plurality of groups are formed in the substrate, and in particular in pixel isolation regions between adjacent pixels. The grooves extend from a first surface of the substrate towards a second surface of the substrate. An embedded film extends into the grooves. At least some of the grooves include a first stage near the first surface of the substrate and a second stage near the second surface of the substrate that are defined by walls of the grooves, wherein the first stage is wider than the second stage, and wherein a step is present between the first and second stages. In addition, the device includes a light shielding film adjacent the first surface of the substrate that overlies the grooves. A portion of the light shielding film is embedded in the embedded film that extends into the grooves.

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