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公开(公告)号：US20220278160A1
公开(公告)日：2022-09-01
申请号：US17695481
申请日：2022-03-15
发明人： HAJIME YAMAGISHI , KIYOTAKA TABUCHI , MASAKI OKAMOTO , TAKASHI OINOUE , MINORU ISHIDA , SHOTA HIDA , KAZUTAKA YAMANE
IPC分类号： H01L27/146 , H01L27/14 , H01L23/522 , H01L23/528 , H01L23/552
摘要： This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.
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公开(公告)号：US20240332335A1
公开(公告)日：2024-10-03
申请号：US18742637
申请日：2024-06-13
发明人： HAJIME YAMAGISHI , KIYOTAKA TABUCHI , MASAKI OKAMOTO , TAKASHI OINOUE , MINORU ISHIDA , SHOTA HIDA , KAZUTAKA YAMANE
IPC分类号： H01L27/146 , H01L23/48 , H01L23/522 , H01L23/528 , H01L23/552 , H01L27/14 , H04N25/616 , H04N25/67 , H04N25/71 , H04N25/75
CPC分类号： H01L27/14634 , H01L23/5225 , H01L23/5286 , H01L23/552 , H01L27/14 , H01L27/146 , H01L27/14623 , H01L27/14636 , H01L27/14643 , H01L23/481 , H01L27/14627 , H04N25/616 , H04N25/67 , H04N25/745 , H04N25/75
摘要： This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.
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