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公开(公告)号:US12041365B2
公开(公告)日:2024-07-16
申请号:US18296951
申请日:2023-04-06
申请人: Apple Inc.
IPC分类号: G06K9/00 , G06T5/00 , H04N1/60 , H04N9/64 , H04N9/77 , H04N23/63 , H04N23/661 , H04N23/68 , H04N23/80 , H04N23/84 , H04N25/13 , H04N25/133 , H04N25/611 , H04N25/67 , H04N25/68
CPC分类号: H04N25/68 , G06T5/00 , H04N1/60 , H04N9/64 , H04N9/646 , H04N9/77 , H04N23/631 , H04N23/633 , H04N23/661 , H04N23/6811 , H04N23/80 , H04N23/843 , H04N25/133 , H04N25/134 , H04N25/136 , H04N25/611 , H04N25/67
摘要: Systems and methods for down-scaling are provided. In one example, a method for processing image data includes determining a plurality of output pixel locations using a position value stored by a position register, using the current position value to select a center input pixel from the image data and selecting an index value, selecting a set of input pixels adjacent to the center input pixel, selecting a set of filtering coefficients from a filter coefficient lookup table using the index value, filtering the set of source input pixels to apply a respective one of the set of filtering coefficients to each of the set of source input pixels to determine an output value for the current output pixel at the current position value, and correcting chromatic aberrations in the set of source input pixels.
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公开(公告)号:US20240047499A1
公开(公告)日:2024-02-08
申请号:US18491450
申请日:2023-10-20
发明人: Kyohei MIZUTA
IPC分类号: H01L27/146 , H04N25/77 , H01L21/768 , H04N25/67 , H01L25/065 , H04N25/79 , H04N25/70 , H01L23/522
CPC分类号: H01L27/14636 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14645 , H01L27/1469 , H04N25/77 , H01L27/14638 , H01L21/76898 , H04N25/67 , H01L25/0657 , H04N25/79 , H01L27/146 , H04N25/70 , H01L23/5226
摘要: The present technology relates to a solid-state imaging device compatible with miniaturization of pixels, a method for manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device is formed by joining a front surface side as the wiring layer formation surface of the first semiconductor substrate to a back surface side of the second semiconductor substrate. The first semiconductor substrate includes a photodiode and a transfer transistor. The second semiconductor substrate includes a charge/voltage retention portion that retains the electric charge transferred by the transfer transistor or the voltage corresponding to the electric charge. The solid-state imaging device includes a through electrode that penetrates the second semiconductor substrate, and transmits the electric charge or the voltage to the charge/voltage retention portion. The present technology can be applied to solid-state imaging devices and the like, for example.
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公开(公告)号:US11867564B2
公开(公告)日:2024-01-09
申请号:US17658567
申请日:2022-04-08
IPC分类号: G01J5/53 , H04N5/33 , H04N3/09 , G01J3/02 , G01J3/36 , G01J5/00 , G01J3/26 , G01J3/28 , G01J5/20 , G01J5/0806 , G01J5/0802 , G01J5/0804 , H04N23/11 , H04N25/67 , H04N25/671 , H04N25/673 , G01N21/3504 , G01J3/12 , G01N21/17 , G01J5/80
CPC分类号: G01J5/53 , G01J3/0208 , G01J3/0232 , G01J3/0256 , G01J3/0297 , G01J3/12 , G01J3/26 , G01J3/28 , G01J3/2823 , G01J3/36 , G01J5/0014 , G01J5/0802 , G01J5/0804 , G01J5/0806 , G01J5/20 , G01N21/3504 , H04N3/09 , H04N5/33 , H04N23/11 , H04N25/67 , H04N25/671 , H04N25/673 , G01J5/80 , G01J2003/283 , G01J2003/2826 , G01J2005/0077 , G01N2021/1793 , G01N2021/3531 , G01N2201/068 , G01N2201/06106 , G01N2201/127
摘要: Various embodiments disclosed herein describe a divided-aperture infrared spectral imaging (DAISI) system that is adapted to acquire multiple IR images of a scene with a single-shot (also referred to as a snapshot). The plurality of acquired images having different wavelength compositions that are obtained generally simultaneously. The system includes at least two optical channels that are spatially and spectrally different from one another. Each of the at least two optical channels are configured to transfer IR radiation incident on the optical system towards an optical FPA unit comprising at least two detector arrays disposed in the focal plane of two corresponding focusing lenses. The system further comprises at least one temperature reference source or surface that is used to dynamically calibrate the two detector arrays and compensate for a temperature difference between the two detector arrays.
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公开(公告)号:US20230336888A1
公开(公告)日:2023-10-19
申请号:US18330973
申请日:2023-06-07
申请人: Apple Inc.
发明人: Guy Cote , D. Amnon Silverstein , Suk Hwan Lim , Sheng Lin , Haitao Guo
IPC分类号: H04N25/67
CPC分类号: H04N25/67
摘要: The present disclosure generally relates to systems and methods for image data processing. In certain embodiments, an image processing pipeline may be configured to receive a frame of the image data having a plurality of pixels acquired using a digital image sensor. The image processing pipeline may then be configured to determine a first plurality of correction factors that may correct each pixel in the plurality of pixels for fixed pattern noise. The first plurality of correction factors may be determined based at least in part on fixed pattern noise statistics that correspond to the frame of the image data. After determining the first plurality of correction factors, the image processing pipeline may be configured to configured to apply the first plurality of correction factors to the plurality of pixels, thereby reducing the fixed pattern noise present in the plurality of pixels.
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公开(公告)号:US11785359B2
公开(公告)日:2023-10-10
申请号:US18097207
申请日:2023-01-14
申请人: PixArt Imaging Inc.
发明人: Joon-Chok Lee , Kevin Len-Li Lim
IPC分类号: H04N25/67 , G06F3/0354 , G06T5/20
CPC分类号: H04N25/67 , G06F3/0354 , G06T5/20
摘要: There is provided an optical navigation device including an image sensor and a processing unit. The image sensor outputs successive image frames. The processing unit calculates a contamination level and a motion signal based on filtered image frames, and determines whether to update a fixed pattern noise (FPN) stored in a frame buffer according to a level of FPN subtraction, the calculated contamination level and the calculated motion signal to optimize the update of the fixed pattern noise.
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公开(公告)号:US11671719B1
公开(公告)日:2023-06-06
申请号:US17709518
申请日:2022-03-31
申请人: ams Sensors USA Inc.
IPC分类号: H04N25/77 , H04N25/57 , H04N25/71 , H04N25/771 , H04N25/778 , H04N25/67
CPC分类号: H04N25/57 , H04N25/745 , H04N25/771 , H04N25/778 , H04N25/67
摘要: A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.
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公开(公告)号:US11653114B2
公开(公告)日:2023-05-16
申请号:US16925595
申请日:2020-07-10
IPC分类号: H04N5/378 , H04N25/617 , H01L27/146 , G06T7/55 , H04N25/67 , H04N25/75 , H04N25/771 , H04N25/778
CPC分类号: H04N25/617 , G06T7/55 , H01L27/14603 , H04N25/67 , H04N25/75 , H04N25/771 , H04N25/778 , G06T2207/30252
摘要: An embodiment includes: a semiconductor substrate including a pixel well region and a peripheral well region; a pixel ground line arranged above the pixel well region; a pixel well contact between the pixel ground line and the pixel well region; pixels arranged to form columns in the pixel well region; a reference signal generation circuit arranged in the peripheral well region; and comparator units arranged in the peripheral well region, provided to respective columns, and each configured to receive the pixel signal from the pixels on a corresponding column and the reference signal. Each comparator unit includes a comparator having a first input node that receives the pixel signal and a second input node that receives the reference signal, a first capacitor unit between the reference signal generation circuit and the second input node, and a second capacitor unit between the second input node and the pixel ground line.
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公开(公告)号:US11962923B2
公开(公告)日:2024-04-16
申请号:US17683000
申请日:2022-02-28
申请人: SK hynix Inc.
发明人: Cheol Jon Jang
IPC分类号: H04N25/67 , H04N25/671
CPC分类号: H04N25/671
摘要: An image processing device includes a target pixel detector configured to detect a plurality of target pixels in which noise is generated among a plurality of pixels included in an image sensor. The image processing device also includes a target pixel corrector configured to change target pixel values, which are pixel values of the plurality of target pixels, by using average pixel values of neighboring pixels included in a preset range based on a position of each of the plurality of target pixels. The image processing device further includes a target pixel compensator configured to compensate for the target pixel values by using an accumulation value obtained by accumulating values corresponding to a decimal fraction part of the average pixel values.
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公开(公告)号:US11942502B2
公开(公告)日:2024-03-26
申请号:US16964674
申请日:2019-01-18
发明人: Kyohei Mizuta
IPC分类号: H01L27/146 , H01L21/768 , H01L23/522 , H01L25/065 , H04N25/67 , H04N25/70 , H04N25/77 , H04N25/79
CPC分类号: H01L27/14636 , H01L21/76898 , H01L23/5226 , H01L25/0657 , H01L27/146 , H01L27/14623 , H01L27/14627 , H01L27/14634 , H01L27/14638 , H01L27/14645 , H01L27/1469 , H04N25/67 , H04N25/70 , H04N25/77 , H04N25/79
摘要: The present technology relates to a solid-state imaging device compatible with miniaturization of pixels, a method for manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device is formed by joining a front surface side as the wiring layer formation surface of the first semiconductor substrate to a back surface side of the second semiconductor substrate. The first semiconductor substrate includes a photodiode and a transfer transistor. The second semiconductor substrate includes a charge/voltage retention portion that retains the electric charge transferred by the transfer transistor or the voltage corresponding to the electric charge. The solid-state imaging device includes a through electrode that penetrates the second semiconductor substrate, and transmits the electric charge or the voltage to the charge/voltage retention portion. The present technology can be applied to solid-state imaging devices and the like, for example.
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公开(公告)号:US20240073556A1
公开(公告)日:2024-02-29
申请号:US18451754
申请日:2023-08-17
发明人: Andreas Suess , Tomas Geurts
IPC分类号: H04N25/67 , H04N25/616 , H04N25/706 , H04N25/709 , H04N25/76 , H04N25/78
CPC分类号: H04N25/67 , H04N25/616 , H04N25/706 , H04N25/709 , H04N25/7795 , H04N25/78
摘要: Fixed pattern noise (FPN) reduction techniques in image sensors operated with pulse illumination are disclosed herein. In one embodiment, a method includes, during a first sub-exposure period of a frame, (a) operating a first tap of a pixel to capture a first signal corresponding to first charge at a first floating diffusion, the first charge corresponding to first light incident on a photosensor, and (b) operating a second tap of the pixel to capture a first parasitic signal corresponding to FPN at a second floating diffusion. The method further includes, during a second sub-exposure period of the frame, (a) operating the second tap to capture a second signal corresponding to second charge at the second floating diffusion, the second charge corresponding to second light incident on the photosensor, and (b) operating the first tap to capture a second parasitic signal corresponding to FPN at the first floating diffusion.
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