公开(公告)号：US20240332335A1

公开(公告)日：2024-10-03

申请号：US18742637

申请日：2024-06-13

申请人： SONY GROUP CORPORATION

发明人： HAJIME YAMAGISHI ,  KIYOTAKA TABUCHI ,  MASAKI OKAMOTO ,  TAKASHI OINOUE ,  MINORU ISHIDA ,  SHOTA HIDA ,  KAZUTAKA YAMANE

IPC分类号： H01L27/146 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/552 ,  H01L27/14 ,  H04N25/616 ,  H04N25/67 ,  H04N25/71 ,  H04N25/75

CPC分类号： H01L27/14634 ,  H01L23/5225 ,  H01L23/5286 ,  H01L23/552 ,  H01L27/14 ,  H01L27/146 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H01L23/481 ,  H01L27/14627 ,  H04N25/616 ,  H04N25/67 ,  H04N25/745 ,  H04N25/75

摘要： This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.

公开(公告)号：US20240147555A1

公开(公告)日：2024-05-02

申请号：US18550688

申请日：2022-01-21

申请人： SONY GROUP CORPORATION

发明人： MOTOSUKE IRIE ,  KATSUKI HIRABAYASHI ,  YOSHINORI OOTA ,  KOICHI OSHIMA ,  MINORU ISHIDA

IPC分类号： H04W76/14 ,  H04W4/38

CPC分类号： H04W76/14 ,  H04W4/38

摘要： A communication system (100) includes: a plurality of stacked containers (2) having conductivity; and a plurality of electric field communication terminals (5) attached to the containers (2) in such a manner as to perform electric field coupling with any of the plurality of containers (2), in which the plurality of containers (2) includes a container (2) that contains a sensing terminal (4) that acquires sensing data, the plurality of electric field communication terminals (5) includes a first electric field communication terminal (5) attached to an inner side of the container (2) in which the sensing terminal (4) is contained, and a second electric field communication terminal (5) attached to an outer side of at least one container (2) of the plurality of containers (2), and the first electric field communication terminal (5) transmits the sensing data from the sensing terminal (4) to the second electric field communication terminal (5) via the plurality of containers (2).

公开(公告)号：US20220278160A1

公开(公告)日：2022-09-01

申请号：US17695481

申请日：2022-03-15

申请人： SONY GROUP CORPORATION

发明人： HAJIME YAMAGISHI ,  KIYOTAKA TABUCHI ,  MASAKI OKAMOTO ,  TAKASHI OINOUE ,  MINORU ISHIDA ,  SHOTA HIDA ,  KAZUTAKA YAMANE

IPC分类号： H01L27/146 ,  H01L27/14 ,  H01L23/522 ,  H01L23/528 ,  H01L23/552

摘要： This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.

公开(公告)号：US20230124400A1

公开(公告)日：2023-04-20

申请号：US17974710

申请日：2022-10-27

申请人： SONY GROUP CORPORATION

发明人： TOMOHIKO ASATSUMA ,  MINORU ISHIDA

IPC分类号： H01L27/146

摘要： Provided are a first photoelectric conversion unit, a second photoelectric conversion unit having a smaller electric charge amount to be converted per unit time than the first photoelectric conversion unit, a charge accumulation unit that accumulates an electric charge generated by the second photoelectric conversion unit, a charge voltage conversion unit, a first transfer gate unit that transfers an electric charge from the first photoelectric conversion unit to the charge voltage conversion unit, a second transfer gate unit that couples potentials of the charge voltage conversion unit and the charge accumulation unit, a third transfer gate unit that transfers an electric charge from the second photoelectric conversion unit to the charge accumulation unit, an overflow path formed under a gate electrode of the third transfer gate unit, where the overflow path transfers an electric charge overflowing from the second photoelectric conversion unit to the charge accumulation unit, and a light reducing unit that reduces light to enter the second photoelectric conversion unit.