公开(公告)号：US20180047868A1

公开(公告)日：2018-02-15

申请号：US15674077

申请日：2017-08-10

Applicant: SORAA, INC.

Inventor： AURELIEN J.F. DAVID ,  MARK P. D'EVELYN ,  CHRISTOPHE A. HURNI ,  NATHAN YOUNG ,  MICHAEL J. CICH

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/08 ,  H01L33/14 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/08 ,  H01L33/145 ,  H01L33/32

Abstract: A method of forming a HI-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers of III-Nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise III-Nitride material and define at least partially a tunnel junction.