公开(公告)号：US20190386178A1

公开(公告)日：2019-12-19

申请号：US16446022

申请日：2019-06-19

Applicant: SORAA, INC.

Inventor： AURELIEN J.F. DAVID ,  CHRISTOPHE HURNI ,  NATHAN YOUNG

IPC: H01L33/32 ,  H01L33/06

Abstract: A method of improving high-current density efficiency of an LED, said method comprising: (a) preparing a series of LEDs having decreasing defect densities, wherein each LED of said series has a peak IQE of at least 50%, and wherein each LED of said series has the same epitaxial structure; (b) determining an increase in IQEs at high-current density between at least two LEDs of said series; (c) preparing at least an additional LED of said series by reducing defect density relative to the previously obtained lowest defect density; and (d) reiterating steps (b) and (c) until said increase is at least 3% between two LEDs of said series having a decrease X in defect densities.

公开(公告)号：US20180047868A1

公开(公告)日：2018-02-15

申请号：US15674077

申请日：2017-08-10

Applicant: SORAA, INC.

Inventor： AURELIEN J.F. DAVID ,  MARK P. D'EVELYN ,  CHRISTOPHE A. HURNI ,  NATHAN YOUNG ,  MICHAEL J. CICH

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/08 ,  H01L33/14 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/08 ,  H01L33/145 ,  H01L33/32

Abstract: A method of forming a HI-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers of III-Nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise III-Nitride material and define at least partially a tunnel junction.