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    HIGH EFFICIENCY GROUP-III NITRIDE LIGHT EMITTING DIODE
    2.
    发明申请
    HIGH EFFICIENCY GROUP-III NITRIDE LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20190386178A1

    公开(公告)日：2019-12-19

    申请号：US16446022

    申请日：2019-06-19

    Applicant: SORAA, INC.

    Inventor： AURELIEN J.F. DAVID ,  CHRISTOPHE HURNI ,  NATHAN YOUNG

    IPC: H01L33/32 ,  H01L33/06

    Abstract: A method of improving high-current density efficiency of an LED, said method comprising: (a) preparing a series of LEDs having decreasing defect densities, wherein each LED of said series has a peak IQE of at least 50%, and wherein each LED of said series has the same epitaxial structure; (b) determining an increase in IQEs at high-current density between at least two LEDs of said series; (c) preparing at least an additional LED of said series by reducing defect density relative to the previously obtained lowest defect density; and (d) reiterating steps (b) and (c) until said increase is at least 3% between two LEDs of said series having a decrease X in defect densities.

    LIGHT EMITTING DIODE WITH LOW REFRACTIVE INDEX MATERIAL LAYERS TO REDUCE LIGHT GUIDING EFFECTS
    9.
    发明申请
    LIGHT EMITTING DIODE WITH LOW REFRACTIVE INDEX MATERIAL LAYERS TO REDUCE LIGHT GUIDING EFFECTS 审中-公开
    具有低折射率指示材料层的光发射二极管，以减少光引导效应

    公开(公告)号：US20160172556A1

    公开(公告)日：2016-06-16

    申请号：US15051326

    申请日：2016-02-23

    Applicant: SORAA, INC.

    Inventor： AURELIEN J.F. DAVID ,  MICHAEL J. GRUNDMANN

    IPC: H01L33/58 ,  H01L33/32 ,  H01L33/04

    CPC classification number: H01L33/58 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/04 ,  H01L33/10 ,  H01L33/32

    Abstract: A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one p-doped layer; (c) an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the LED's refractive index across the thickness of the active region; and (d) at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

    Abstract translation: 一种用于发射具有特定波长的发射光的发光二极管（LED），所述LED包括：（a）至少一个n掺杂层; （b）至少一个p掺杂层; （c）有源区，包括设置在所述至少一个n掺杂层和所述至少一个p掺杂层之间的至少一层发光材料，所述有源区具有平均折射率，其通过将LED的 有效区域的厚度的折射率; 和（d）设置在所述有源区的所述特定波长内的至少一个低折射率层，所述至少一个低折射率层具有低于所述平均折射率的折射率和足以将光发射到引导 所述有源区的模式不超过所述发射光的10％。

    HIGH-PERFORMANCE LED FABRICATION
    10.
    发明申请
    HIGH-PERFORMANCE LED FABRICATION 有权
    高性能LED制造

    公开(公告)号：US20150155439A1

    公开(公告)日：2015-06-04

    申请号：US14615315

    申请日：2015-02-05

    Applicant: SORAA, INC.

    Inventor： MICHAEL J. CICH ,  AURELIEN J.F. DAVID ,  CHRISTOPHE HURNI ,  RAFAEL ALDAZ ,  MICHAEL RAGAN KRAMES

    IPC: H01L33/32 ,  F21V29/70 ,  H01L33/60

    CPC classification number: H01L33/32 ,  F21V29/70 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/405 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/14 ,  H01L2933/0033 ,  H01L2933/0066

    Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

    Abstract translation: 公开了高性能发光二极管及其装置和方法实施例。 发光二极管器件发射波长为390nm至470nm，波长为405nm至430nm。 发光二极管器件的特征在于在器件的横向尺寸和器件的垂直尺寸之间具有几何关系（例如，纵横比），使得几何纵横比形成体积发光二极管，其传送基本平坦的电流密度 跨越设备（例如，跨过活动区域的横向尺寸测量）。 发光二极管器件的特征在于，有源区中的电流密度大于约175A / cm 2。

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