公开(公告)号：US20240011159A1

公开(公告)日：2024-01-11

申请号：US18372123

申请日：2023-09-24

Applicant: SPTS Technologies Limited

Inventor： Stephen BURGESS ,  Kathrine CROOK ,  Daniel ARCHARD ,  William ROYLE ,  Euan Alasdair MORRISON

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/509 ,  C23C16/56 ,  C23C16/40

CPC classification number: C23C16/458 ,  C23C16/455 ,  C23C16/509 ,  C23C16/56 ,  C23C16/401

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

公开(公告)号：US20230212736A1

公开(公告)日：2023-07-06

申请号：US17958390

申请日：2022-10-01

Applicant: SPTS Technologies Limited

Inventor： Scott HAYMORE ,  Tony WILBY ,  Stephen BURGESS

IPC: C23C14/56 ,  C23C14/35 ,  H01J37/34 ,  C23C14/02

CPC classification number: C23C14/566 ,  C23C14/35 ,  H01J37/3405 ,  C23C14/021 ,  H01J37/3447 ,  H01J2237/3322 ,  H01J2237/335 ,  H01J2237/3343

Abstract: A PVD apparatus can be operated in a cleaning mode to remove material from an electrically conductive feature formed on a semiconductor substrate. The semiconductor substrate with the electrically conductive feature formed thereon is positioned on a substrate support in a chamber of the PVD apparatus. A shutter is deployed within the chamber to divide the chamber into a first compartment in which the semiconductor substrate and the substrate support are positioned, and a second compartment in which a target of the PVD apparatus is positioned. A first plasma is generated in the first compartment to remove material from the electrically conductive feature and a second plasma is simultaneously generated in the second compartment to clean the target.

公开(公告)号：US20210246555A1

公开(公告)日：2021-08-12

申请号：US17144699

申请日：2021-01-08

Applicant: SPTS Technologies Limited

Inventor： Stephen BURGESS ,  Katherine CROOK ,  Daniel ARCHARD ,  William ROYLE ,  Euan Alasdair MORRISON

IPC: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.