公开(公告)号：US20210111538A1

公开(公告)日：2021-04-15

申请号：US16498385

申请日：2018-03-13

Applicant: MEIJO UNIVERSITY ,  STANLEY ELECTRIC CO., LTD.

Inventor： Tetsuya TAKEUCHI ,  Isamu AKASAKI ,  Kazuki KIYOHARA ,  Masaru TAKIZAWA ,  Ji-Hao LIANG

IPC: H01S5/183

Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

公开(公告)号：US20170271847A1

公开(公告)日：2017-09-21

申请号：US15452772

申请日：2017-03-08

Applicant: STANLEY ELECTRIC CO., LTD.

Inventor： Shinichi TANAKA ,  Kazuki KIYOHARA ,  Yusuke YOKOBAYASHI

IPC: H01S5/12 ,  H01S5/183 ,  H01S5/187 ,  H01S5/026 ,  H01L33/00 ,  H01S5/343

CPC classification number: H01S5/18327 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32 ,  H01L2933/0058 ,  H01S5/0425 ,  H01S5/1231 ,  H01S5/183 ,  H01S5/18319 ,  H01S5/18341 ,  H01S5/187 ,  H01S5/34333

Abstract: A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.