公开(公告)号：US09620413B2

公开(公告)日：2017-04-11

申请号：US14097534

申请日：2013-12-05

申请人： STATS ChipPAC, Ltd.

发明人： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojian Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC分类号： H01L21/78 ,  H01L23/28 ,  H01L23/522 ,  H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L23/498

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L24/12 ,  H01L24/19 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/951 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00

摘要： A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

公开(公告)号：US20140091455A1

公开(公告)日：2014-04-03

申请号：US14097534

申请日：2013-12-05

申请人： STATS ChipPAC, Ltd.

发明人： Thomas J. Strothmann ,  Damien M. Pricolo ,  Il Kwon Shim ,  Yaojioan Lin ,  Heinz-Peter Wirtz ,  Seung Wook Yoon ,  Pandi C. Marimuthu

IPC分类号： H01L21/78 ,  H01L23/522 ,  H01L23/28

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/28 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L24/12 ,  H01L24/19 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/951 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00

摘要： A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.

摘要翻译： 半导体器件具有固定尺寸的载体。 从第一半导体晶片切割多个第一半导体管芯。 第一半导体管芯设置在载体上。 载体上的第一半导体管芯的数量与从第一半导体晶片分离的第一半导体管芯的尺寸和数量无关。 在第一半导体管芯和载体上并围绕第一半导体管芯和载体沉积密封剂以形成重构的板。 在重构的面板上形成互连结构，同时留下没有互连结构的密封剂。 重建的面板通过密封剂分离。 从载体上去除第一半导体管芯。 具有与第一半导体管芯的尺寸不同的尺寸的第二半导体管芯设置在载体上。 载体的固定尺寸与第二半导体管芯的尺寸无关。