公开(公告)号：US20230402399A1

公开(公告)日：2023-12-14

申请号：US18329605

申请日：2023-06-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SeungHyun LEE ,  KyungHwan KIM ,  HongKyu PARK ,  InHo SEO ,  MyungGyu JIN

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/36

CPC classification number: H01L23/552 ,  H01L23/3121 ,  H01L21/56 ,  H01L23/36

Abstract: A semiconductor device comprises a substrate, at least one electronic component mounted on the substrate, an encapsulant formed on the substrate and at least partially encapsulating the at least one electronic component, a shielding layer formed on the encapsulant, a thermal interface layer formed on the shielding layer, and a metal lid formed on the thermal interface layer.

公开(公告)号：US20230395449A1

公开(公告)日：2023-12-07

申请号：US18328795

申请日：2023-06-05

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SeungHyun LEE ,  HyeonChul LEE ,  YuJin HWANG ,  DaYoung KWON

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/3128 ,  H01L21/565 ,  H01L24/32 ,  H01L2924/3025 ,  H01L2224/32225

Abstract: A method for forming a semiconductor device is provided. The method include: providing a package including: a substrate; a stress absorbing layer disposed on a top surface of the substrate; an electronic component mounted on the top surface of substrate; and a first contact pad disposed on the top surface of the substrate and exposed from the stress absorbing layer; providing a mold including: a first cavity exposed from a bottom surface of the mold; and a recess formed adjacent to the first cavity; engaging the mold and the package with the first cavity over the electronic component and the recess between the electronic component and the first contact pad; and injecting encapsulation material into the first cavity to form an encapsulant over the electronic component.

公开(公告)号：US20240112981A1

公开(公告)日：2024-04-04

申请号：US18475238

申请日：2023-09-27

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh KIM ,  SeungHyun LEE ,  HeeSoo LEE

IPC: H01L23/42 ,  H01L21/48 ,  H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L23/42 ,  H01L21/4882 ,  H01L23/367 ,  H01L23/481 ,  H01L24/32 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/32245 ,  H01L2225/06568

Abstract: A semiconductor device comprises a substrate; a primary semiconductor die attached onto the substrate comprising a front surface and a back surface, wherein the primary semiconductor die has a first region and a second region besides the first region; an auxiliary semiconductor die attached onto the front surface at the first region; a heat transfer block comprising a main body attached onto the front surface at the second region; a metal layer wrapping around the main body; a graphene layer formed outside of the metal layer; a heat spreader attached onto the substrate and defining with the substrate a chamber for accommodating the primary semiconductor die, the auxiliary semiconductor die and the heat transfer block, wherein the graphene layer extends between the heat spreader and the front surface such that heat generated by the first region can be transferred to the heat spreader through the graphene layer.