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公开(公告)号：US20170019526A1
公开(公告)日：2017-01-19
申请号：US15045935
申请日：2016-02-17
Applicant: STMicroelectronics (Tours) SAS
Inventor： Jean-Michel Simonnet , Christian Ballon
CPC classification number: H04M1/745 , H01L27/0248 , H01L27/0262 , H01L29/0638 , H01L29/74 , H02H9/041 , H02H9/043 , H04M3/005 , H04M3/18 , H04M19/08 , H04M2201/80
Abstract: A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyristors, a metallization corresponding to the main electrode on the gate side is in contact, by its entire surface, with a corresponding semiconductor region. Furthermore, the gate of each thyristor is directly connected to a voltage source defining one of the thresholds.
Abstract translation: 结构保护SLIC电话线接口免于低于负阈值或高于正阈值的过电压。 该结构包括连接在电话线的每个导体和参考电位之间的至少一个晶闸管。 对于所有包括的晶闸管，对应于栅极侧的主电极的金属化通过其整个表面与相应的半导体区域接触。 此外，每个晶闸管的栅极直接连接到限定其中一个阈值的电压源。
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Patent Agency Ranking
公开(公告)号：US11935884B2
公开(公告)日：2024-03-19
申请号：US18060448
申请日：2022-11-30
Applicant: STMICROELECTRONICS S.r.l. , STMICROELECTRONICS (TOURS) SAS
Inventor： Jean-Michel Simonnet , Sophie Ngo , Simone Rascuna'
IPC: H01L27/02 , H01L29/04 , H01L29/16 , H01L29/20 , H01L29/417 , H01L29/868 , H02H9/04
CPC classification number: H01L27/0255 , H01L29/04 , H01L29/16 , H01L29/1608 , H01L29/2003 , H01L29/417 , H01L29/868 , H02H9/046
Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.
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公开(公告)号：US11532606B2
公开(公告)日：2022-12-20
申请号：US16806257
申请日：2020-03-02
Applicant: STMicroelectronics (Tours) SAS , STMicroelectronics S.r.l.
Inventor： Jean-Michel Simonnet , Sophie Ngo , Simone Rascunà
IPC: H01L27/02 , H01L29/04 , H01L29/16 , H01L29/20 , H01L29/417 , H01L29/868 , H02H9/04
Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.
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公开(公告)号：US12009658B2
公开(公告)日：2024-06-11
申请号：US17661352
申请日：2022-04-29
Applicant: STMicroelectronics (Tours) SAS
Inventor： Jean-Michel Simonnet , David Jouve , Frédéric Lanois
CPC classification number: H02H9/046 , H01L27/0255 , H02H9/005
Abstract: The present disclosure relates to a transient voltage suppression device comprising a single crystal semiconductor substrate doped with a first conductivity type comprising first and second opposing surfaces, a semiconductor region doped with a second conductivity type opposite to the first conductivity type extending into the substrate from the first surface, a first electrically conductive electrode on the first side contacting the semiconductor region and a second electrically conductive electrode on the second side contacting the substrate, a first interface between the substrate and the semiconductor region forming the junction of a TVS diode and a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming the junction of a Schottky diode.
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公开(公告)号：US10148810B2
公开(公告)日：2018-12-04
申请号：US15045935
申请日：2016-02-17
Applicant: STMicroelectronics (Tours) SAS
Inventor： Jean-Michel Simonnet , Christian Ballon
Abstract: A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyristors, a metallization corresponding to the main electrode on the gate side is in contact, by its entire surface, with a corresponding semiconductor region. Furthermore, the gate of each thyristor is directly connected to a voltage source defining one of the thresholds.
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公开(公告)号：US20220360072A1
公开(公告)日：2022-11-10
申请号：US17661352
申请日：2022-04-29
Applicant: STMicroelectronics (Tours) SAS
Inventor： Jean-Michel Simonnet , David Jouve , Frédéric Lanois
Abstract: The present disclosure relates to a transient voltage suppression device comprising a single crystal semiconductor substrate doped with a first conductivity type comprising first and second opposing surfaces, a semiconductor region doped with a second conductivity type opposite to the first conductivity type extending into the substrate from the first surface, a first electrically conductive electrode on the first side contacting the semiconductor region and a second electrically conductive electrode on the second side contacting the substrate, a first interface between the substrate and the semiconductor region forming the junction of a TVS diode and a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming the junction of a Schottky diode.
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