公开(公告)号：US09257550B2

公开(公告)日：2016-02-09

申请号：US14788708

申请日：2015-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Donato Corona ,  Nicolo′ Frazzetto ,  Antonio Giuseppe Grimaldi ,  Corrado Iacono ,  Monica Micciche′

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/732 ,  H01L29/808 ,  H01L29/165 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7802 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/046 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0821 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66916 ,  H01L29/7322 ,  H01L29/7813 ,  H01L29/8083

Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.