公开(公告)号：US20210363000A1

公开(公告)日：2021-11-25

申请号：US17320993

申请日：2021-05-14

Applicant: STMicroelectronics S.r.l.

Inventor： Giorgio ALLEGATO ,  Lorenzo CORSO ,  Ilaria GELMI ,  Carlo VALZASINA

IPC: B81B3/00 ,  B81C1/00

Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.

公开(公告)号：US20240199408A1

公开(公告)日：2024-06-20

申请号：US18590533

申请日：2024-02-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Giorgio ALLEGATO ,  Lorenzo CORSO ,  Ilaria GELMI ,  Carlo VALZASINA

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0051 ,  B81C1/00595 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2201/0198

Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.

公开(公告)号：US20220169498A1

公开(公告)日：2022-06-02

申请号：US17534286

申请日：2021-11-23

Applicant: STMICROELECTRONICS S.R.L. ,  STMicroelectronics International N.V.

Inventor： Enri DUQI ,  Lorenzo BALDO ,  Paolo FERRARI ,  Benedetto Vigna ,  Flavio Francesco VILLA ,  Laura Maria CASTOLDI ,  Ilaria GELMI

IPC: B81B7/00

Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.