公开(公告)号：US20160079131A1

公开(公告)日：2016-03-17

申请号：US14951050

申请日：2015-11-24

Applicant: STMicroelectronics, Inc.

Inventor： John H. ZHANG ,  Walter KLEEMEIER ,  Paul FERREIRA ,  Ronald K. SAMPSON

IPC: H01L21/66 ,  H01L25/00

CPC classification number: H01L23/544 ,  H01L22/14 ,  H01L22/22 ,  H01L22/34 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A device is provided that includes a first die having a first alignment structure that includes a plurality of first transmission columns arranged in a pattern and a second die positioned on the first die, the second die having a second alignment structure that includes a plurality of second transmission columns arranged in the same pattern as the first transmission columns. The first and second transmission columns are each coplanar with a first surface and a second surface of the first and second die, respectively.

Abstract translation: 提供了一种装置，其包括具有第一对准结构的第一管芯，所述第一对准结构包括以图案排列的多个第一传输柱和位于所述第一管芯上的第二管芯，所述第二管芯具有第二对准结构，所述第二对准结构包括多个第二 传输列以与第一传输列相同的图案排列。 第一和第二透射柱分别与第一和第二模具的第一表面和第二表面共面。

公开(公告)号：US20160276371A1

公开(公告)日：2016-09-22

申请号：US15169462

申请日：2016-05-31

Applicant: STMicroelectronics, Inc.

Inventor： Ronald K. SAMPSON ,  Nicolas LOUBET

IPC: H01L27/12 ,  H01L29/06 ,  H01L21/84 ,  H01L29/66 ,  H01L21/308 ,  H01L29/10 ,  H01L29/167 ,  H01L21/265 ,  H01L29/49 ,  H01L21/02

CPC classification number: H01L27/1211 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/26513 ,  H01L21/28035 ,  H01L21/3081 ,  H01L21/845 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/1083 ,  H01L29/167 ,  H01L29/4916 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a transistor channel. Sidewall spacers are formed on side walls of the elongated gates. Portions of the elongated fins located between the elongated gates are removed, along with the underlying insulation, to expose the underlying substrate. One or more semiconductor material layers are then epitaxially grown from the underlying substrate at locations between the elongated gates. The one or more semiconductor material layers may include an undoped epi-layer and an overlying doped epi-layer. The epitaxial material defines a source or drain of the transistor.

Abstract translation: 将半导体材料图案化以限定与底层基板绝缘的细长翅片。 多晶硅半导体材料沉积在细长翅片之上并在细长翅片之间，并且被图案化以限定延伸到在晶体管沟槽处垂直交叉在细长翅片上的细长门。 侧壁间隔件形成在细长门的侧壁上。 位于细长门之间的细长翅片的部分与下面的绝缘体一起被去除以暴露下面的基底。 然后在细长门之间的位置从下面的衬底外延生长一个或多个半导体材料层。 一个或多个半导体材料层可以包括未掺杂的外延层和上覆的掺杂外延层。 外延材料限定晶体管的源极或漏极。

公开(公告)号：US20180114756A1

公开(公告)日：2018-04-26

申请号：US15851467

申请日：2017-12-21

Applicant: STMicroelectronics, Inc.

Inventor： John H. ZHANG ,  Walter KLEEMEIER ,  Paul FERREIRA ,  Ronald K. SAMPSON

IPC: H01L23/544 ,  H01L21/66 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L23/544 ,  H01L22/14 ,  H01L22/22 ,  H01L22/34 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06593 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A device is provided that includes a first die having a first alignment structure that includes a plurality of first transmission columns arranged in a pattern and a second die positioned on the first die, the second die having a second alignment structure that includes a plurality of second transmission columns arranged in the same pattern as the first transmission columns. The first and second transmission columns are each coplanar with a first surface and a second surface of the first and second die, respectively.