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    TEMPERATURE-COMPENSATED MICRO-ELECTROMECHANICAL DEVICE, AND METHOD OF TEMPERATURE COMPENSATION IN A MICRO-ELECTROMECHANICAL DEVICE
    1.
    发明申请
    TEMPERATURE-COMPENSATED MICRO-ELECTROMECHANICAL DEVICE, AND METHOD OF TEMPERATURE COMPENSATION IN A MICRO-ELECTROMECHANICAL DEVICE 审中-公开
    温度补偿型微电化学装置及微机电装置中的温度补偿方法

    公开(公告)号：US20150284243A1

    公开(公告)日：2015-10-08

    申请号：US14271009

    申请日：2014-05-06

    申请人： STMicroelectronics S.r.l.

    发明人： Ernesto Lasalandra ,  Angelo Merassi ,  Sarah Zerbini

    IPC分类号： B81C1/00

    CPC分类号： B81C1/0069 ,  B81B3/0081 ,  B81B2201/025 ,  B81C1/00158 ,  B81C1/00666 ,  G01C19/56 ,  G01C19/5755 ,  G01P1/006 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0814 ,  H03H9/02448 ,  H03H2009/02496 ,  Y10T29/43

    摘要： A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

    摘要翻译： 微机电装置包括半导体衬底，其中第一微结构和第二参考微结构被集成。 第一微结构和第二微结构被布置在基板中，以便由于基板的热膨胀而产生相等的应变。 此外，第一微结构相对于基板设置有可移动部件和固定部件，而第二微结构具有与第一微结构基本对称的形状，但是相对于基板固定。 通过从第一微结构的电特性减去第一微结构的电特性的变化，可以补偿由热膨胀或收缩的变化引起的第一微结构的电特性的变化。