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公开(公告)号：US09389256B2
公开(公告)日：2016-07-12
申请号：US13717780
申请日：2012-12-18
Inventor： Paolo Angelini , Giovanni Carlo Tripoli , Ernesto Lasalandra , Tommaso Ungaretti , Kien Beng Tan , Yannick Guedon , Dianbo Guo , Sze-Kwang Tan
CPC classification number: G01R27/2605 , G06F3/0418 , G06F3/044
Abstract: Capacitance sensing circuits and methods are provided. The capacitance sensing circuit includes a capacitance-to-voltage converter configured to receive a signal from a capacitance to be sensed and to provide an output signal representative of the capacitance, an output chopper configured to convert the output signal of the capacitance-to-voltage converter to a sensed voltage representative of the capacitance to be sensed, an analog accumulator configured to accumulate sensed voltages during an accumulation period of NA sensing cycles and to provide an accumulated analog value, an amplifier configured to amplify the accumulated analog value, and an analog-to-digital converter configured to convert the amplified accumulated analog value to a digital value representative of the capacitance to be sensed. The analog accumulator may include a low pass filter having a frequency response to filter wideband noise.
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公开(公告)号：USRE46671E1
公开(公告)日：2018-01-16
申请号：US14069136
申请日：2013-10-31
Applicant: STMicroelectronics S.r.l.
Inventor： Chantal Combi , Benedetto Vigna , Federico Giovanni Ziglioli , Lorenzo Baldo , Manuela Magugliani , Ernesto Lasalandra , Caterina Riva
CPC classification number: B81B7/0061 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81C1/0023 , H01L2224/48091 , H01L2224/73265 , H01L2924/1461 , H01L2924/3025 , H04R1/04 , H04R19/005 , H01L2924/00014 , H01L2924/00
Abstract: A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.
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3.发明申请公开(公告)号：US20150284243A1
公开(公告)日：2015-10-08
申请号：US14271009
申请日：2014-05-06
Applicant: STMicroelectronics S.r.l.
Inventor： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
IPC: B81C1/00
CPC classification number: B81C1/0069 , B81B3/0081 , B81B2201/025 , B81C1/00158 , B81C1/00666 , G01C19/56 , G01C19/5755 , G01P1/006 , G01P15/125 , G01P15/18 , G01P2015/0814 , H03H9/02448 , H03H2009/02496 , Y10T29/43
Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.
Abstract translation: 微机电装置包括半导体衬底，其中第一微结构和第二参考微结构被集成。 第一微结构和第二微结构被布置在基板中，以便由于基板的热膨胀而产生相等的应变。 此外，第一微结构相对于基板设置有可移动部件和固定部件，而第二微结构具有与第一微结构基本对称的形状，但是相对于基板固定。 通过从第一微结构的电特性减去第一微结构的电特性的变化，可以补偿由热膨胀或收缩的变化引起的第一微结构的电特性的变化。
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4.发明申请公开(公告)号：US20140312919A1
公开(公告)日：2014-10-23
申请号：US14322244
申请日：2014-07-02
Inventor： Kien Beng Tan , Ernesto Lasalandra , Tommaso Ungaretti , Yannick Guedon , Dianbo Guo , Paolo Angelini , Giovanni Carlo Tripoli
CPC classification number: G01R27/2605 , G06F3/0416 , G06F3/044 , G06F2203/04104
Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitive to voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.
Abstract translation: 提供电容感测电路和方法。 双模电容感测电路包括具有放大器和耦合在放大器的输出和反相输入端之间的积分电容的电容 - 电压转换器，以及响应于从模拟信号提供的控制信号的相互模式控制信号的开关电路 电容式触摸矩阵到互电容感测模式中的电容到电压转换器，并且响应于用于在自电容感测模式中控制从电容式触摸矩阵提供给电容 - 电压转换器的信号的自模式控制信号，其中电容感测 电路可配置为在互电容感测模式或自身电容感测模式下工作。
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公开(公告)号：US10894713B2
公开(公告)日：2021-01-19
申请号：US15863051
申请日：2018-01-05
Applicant: STMicroelectronics S.r.l.
Inventor： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
IPC: B81C1/00 , B81B3/00 , G01C19/56 , G01C19/5755 , G01P1/00 , G01P15/125 , G01P15/18 , H03H9/02 , G01P15/08
Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.
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Patent Agency Ranking
公开(公告)号：US09878903B2
公开(公告)日：2018-01-30
申请号：US14271009
申请日：2014-05-06
Applicant: STMicroelectronics S.r.l.
Inventor： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
IPC: H03H3/007 , B81C1/00 , B81B3/00 , G01C19/56 , G01C19/5755 , G01P1/00 , G01P15/125 , G01P15/18 , H03H9/02 , G01P15/08
CPC classification number: B81C1/0069 , B81B3/0081 , B81B2201/025 , B81C1/00158 , B81C1/00666 , G01C19/56 , G01C19/5755 , G01P1/006 , G01P15/125 , G01P15/18 , G01P2015/0814 , H03H9/02448 , H03H2009/02496 , Y10T29/43
Abstract: Methods of forming micro-electromechanical device include a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.
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7.发明授权Microelectromechanical gyroscope with open loop reading device and control method 有权具有开环读取装置和控制方法的微机电陀螺仪公开(公告)号：US09217641B2
公开(公告)日：2015-12-22
申请号：US14332211
申请日：2014-07-15
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Carlo Caminada , Luciano Prandi , Ernesto Lasalandra
IPC: G01C19/00 , G01C19/5712 , G01C19/5726 , G01C19/5762
CPC classification number: G01C19/5712 , G01C19/5726 , G01C19/5762
Abstract: A microelectromechanical gyroscope that includes a first mass oscillatable according to a first axis; an inertial sensor, including a second mass, drawn along by the first mass and constrained so as to oscillate according to a second axis, in response to a rotation of the gyroscope; a driving device coupled to the first mass so as to form a feedback control loop and configured to maintain the first mass in oscillation at a resonance frequency; and an open-loop reading device coupled to the inertial sensor for detecting displacements of the second mass according to the second axis. The driving device includes a read signal generator for supplying to the inertial sensor at least one read signal having the form of a square-wave signal of amplitude that sinusoidally varies with the resonance frequency.
Abstract translation: 一种微机电陀螺仪，其包括可根据第一轴可振荡的第一质量; 包括第二质量的惯性传感器，其响应于所述陀螺仪的旋转而被所述第一质量拉伸并被约束以便根据第二轴线振荡; 耦合到所述第一质量块的驱动装置，以便形成反馈控制回路并且被配置为将所述第一质量块以共振频率保持在振荡状态; 以及耦合到所述惯性传感器的开环读取装置，用于根据所述第二轴检测所述第二质量块的位移。 驱动装置包括一个读信号发生器，用于向惯性传感器提供至少一个具有振幅方波信号的形式的读信号，正弦波信号随谐振频率正弦变化。
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8.发明授权Configurable analog front-end for mutual capacitance sensing and self capacitance sensing 有权可配置的模拟前端，用于互电容感测和自电容感测公开(公告)号：US09523725B2
公开(公告)日：2016-12-20
申请号：US14322244
申请日：2014-07-02
Inventor： Kien Beng Tan , Ernesto Lasalandra , Tommaso Ungaretti , Yannick Guedon , Dianbo Guo , Paolo Angelini , Giovanni Carlo Tripoli
CPC classification number: G01R27/2605 , G06F3/0416 , G06F3/044 , G06F2203/04104
Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitive to voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.
Abstract translation: 提供电容感测电路和方法。 双模电容感测电路包括具有放大器和耦合在放大器的输出和反相输入端之间的积分电容器的电容 - 电压转换器，以及响应于从模拟信号提供的控制信号的相互模式控制信号的开关电路 电容式触摸矩阵到互电容感测模式中的电容到电压转换器，并且响应于用于在自电容感测模式中控制从电容式触摸矩阵提供给电容 - 电压转换器的信号的自模式控制信号，其中电容感测 电路可配置为在互电容感测模式或自身电容感测模式下工作。
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9.再颁专利公开(公告)号：USRE45439E1
公开(公告)日：2015-03-31
申请号：US13946882
申请日：2013-07-19
Applicant: STMicroelectronics S.r.l.
Inventor： Luciano Prandi , Carlo Caminada , Ernesto Lasalandra
CPC classification number: G01C23/005 , G01C19/5726 , G01C19/5762
Abstract: A microelectromechanical gyroscope having a microstructure that includes a first mass and a second mass, wherein the first mass is oscillatable according to a first axis and the second mass is constrained to the first mass so as to be drawn along by the first mass according to the first axis and to oscillate according to a second axis, in response to a rotation of the microstructure, a driving device coupled to the microstructure to maintain the first mass in oscillation at the driving frequency, and a reading device that detects displacements of the second mass according to the second axis. The gyroscope is provided with a self-test actuation system coupled to the second mass for applying an electrostatic force at the driving frequency so as to move the second mass according to the second axis.
Abstract translation: 具有包括第一质量和第二质量的微结构的微机电陀螺仪，其中所述第一质量可根据第一轴线振荡，并且所述第二质量块被约束为所述第一质量，以便根据所述第一质量块沿着所述第一质量块 第一轴线，并且响应于所述微结构的旋转而根据第二轴线振荡，耦合到所述微结构以将所述第一质量块保持在所述驱动频率处振荡的驱动装置;以及读取装置，其检测所述第二质量块的位移 根据第二轴。 陀螺仪设置有耦合到第二质量块的自检致动系统，用于在驱动频率处施加静电力，以便根据第二轴线移动第二质量块。
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10.发明授权Configurable analog front-end for mutual capacitance sensing and self capacitance sensing 有权可配置的模拟前端，用于互电容感测和自电容感测公开(公告)号：US08976151B2
公开(公告)日：2015-03-10
申请号：US13717766
申请日：2012-12-18
Inventor： Kien Beng Tan , Ernesto Lasalandra , Tommaso Ungaretti , Yannick Guedon , Dianbo Guo , Paolo Angelini , Giovanni Carlo Tripoli
CPC classification number: G01R27/2605 , G06F3/0416 , G06F3/044 , G06F2203/04104
Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a dual mode switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.
Abstract translation: 提供电容感测电路和方法。 双模电容感测电路包括具有放大器和耦合在放大器的输出和反相输入端之间的积分电容器的电容 - 电压转换器，以及响应于所提供的控制信号的相互模式控制信号的双模式切换电路 在互电容感测模式中从电容式触摸矩阵到电容 - 电压转换器，并且响应用于在自电容感测模式下控制从电容式触摸矩阵提供给电容 - 电压转换器的信号的自发模式控制信号， 其中电容感测电路可配置为在互电容感测模式或自电容感测模式下操作。
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