公开(公告)号：US20130128656A1

公开(公告)日：2013-05-23

申请号：US13682592

申请日：2012-11-20

Applicant: STMicroelectronics PVT LTD. ,  STMicroelectronics S.r.l.

Inventor： Danilo Rimondi ,  Carolina Selva ,  Ashish Kumar

IPC: G11C11/00

CPC classification number: G11C11/00 ,  G11C7/20 ,  G11C7/227 ,  G11C11/41 ,  G11C11/413 ,  G11C29/12015 ,  G11C29/24

Abstract: A static random access memory (SRAM) device includes a memory array of a plurality of memory cells, a controller that receives an external clock signal formed by a succession of external pulses and generates an internal clock signal formed by a succession of internal pulses, and a driving circuit that receives the internal clock signal. The controller is operable in a first mode, wherein the controller generates, for each external pulse, a corresponding internal pulse and the controller controls the driving circuit so that the driving circuitry carries out one access to the memory array for each internal pulse. The controller is further operable in a second mode, wherein the controller generates, for each external pulse, a pair of internal pulses, and the controller controls the driving circuitry so that, for each pair of internal pulses, the driving circuitry writes a first data item in a set of memory cells, and then reads the set of memory cells, so as to acquire a second data item.

Abstract translation: 静态随机存取存储器（SRAM）装置包括多个存储单元的存储器阵列，一个接收由一连串外部脉冲形成的外部时钟信号并产生一系列内部脉冲形成的内部时钟信号的控制器，以及 一个接收内部时钟信号的驱动电路。 控制器可在第一模式下操作，其中控制器针对每个外部脉冲产生相应的内部脉冲，并且控制器控制驱动电路，使得驱动电路对每个内部脉冲执行对存储器阵列的一次访问。 控制器还可在第二模式中操作，其中控制器针对每个外部脉冲产生一对内部脉冲，并且控制器控制驱动电路，使得对于每对内部脉冲，驱动电路写入第一数据 项目，然后读取该组存储器单元，以便获取第二数据项。

公开(公告)号：US09245606B2

公开(公告)日：2016-01-26

申请号：US13682592

申请日：2012-11-20

Applicant: STMicroelectronics PVT LTD. ,  STMicroelectronics S.r.l.

Inventor： Danilo Rimondi ,  Carolina Selva ,  Ashish Kumar

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/413 ,  G11C7/20 ,  G11C7/22 ,  G11C29/12 ,  G11C29/24 ,  G11C11/41

CPC classification number: G11C11/00 ,  G11C7/20 ,  G11C7/227 ,  G11C11/41 ,  G11C11/413 ,  G11C29/12015 ,  G11C29/24

Abstract: A static random access memory (SRAM) device includes a memory array of a plurality of memory cells, a controller that receives an external clock signal formed by a succession of external pulses and generates an internal clock signal formed by a succession of internal pulses, and a driving circuit that receives the internal clock signal. The controller is operable in a first mode, wherein the controller generates, for each external pulse, a corresponding internal pulse and the controller controls the driving circuit so that the driving circuitry carries out one access to the memory array for each internal pulse. The controller is further operable in a second mode, wherein the controller generates, for each external pulse, a pair of internal pulses, and the controller controls the driving circuitry so that, for each pair of internal pulses, the driving circuitry writes a first data item in a set of memory cells, and then reads the set of memory cells, so as to acquire a second data item.

Abstract translation: 静态随机存取存储器（SRAM）装置包括多个存储单元的存储器阵列，一个接收由一连串外部脉冲形成的外部时钟信号并产生一系列内部脉冲形成的内部时钟信号的控制器，以及 一个接收内部时钟信号的驱动电路。 控制器可在第一模式下操作，其中控制器针对每个外部脉冲产生相应的内部脉冲，并且控制器控制驱动电路，使得驱动电路对每个内部脉冲执行对存储器阵列的一次访问。 控制器还可在第二模式中操作，其中控制器针对每个外部脉冲产生一对内部脉冲，并且控制器控制驱动电路，使得对于每对内部脉冲，驱动电路写入第一数据 项目，然后读取该组存储器单元，以便获取第二数据项。

公开(公告)号：US08588018B2

公开(公告)日：2013-11-19

申请号：US13684992

申请日：2012-11-26

Applicant: STMicroelectronics S.r.l.

Inventor： Danilo Rimondi ,  Carolina Selva

IPC: G11C7/06

CPC classification number: G11C29/08 ,  G11C11/41 ,  G11C29/02 ,  G11C29/022 ,  G11C29/025 ,  G11C29/026 ,  G11C29/24 ,  G11C29/44 ,  G11C2029/0401

Abstract: A method for testing a memory device. The memory device includes a matrix of memory cells having a plurality of rows and columns; the matrix includes a plurality of rows of operative memory cells each one for storing a variable value and at least one row of auxiliary memory cells each one storing a fixed value. The memory device further includes writing circuitry for writing selected values into the operative memory cells, and reading circuitry for reading the values being stored from the operative or auxiliary memory cells. The method includes reading output values from the row of auxiliary memory cells, determining a malfunctioning of the memory device in response to a missing match of the output values with the fixed values, determining a cause of the malfunctioning according to a pattern of reading errors between the output values and the corresponding fixed values, and providing a signal indicative of the cause of the malfunctioning.

Abstract translation: 一种用于测试存储器件的方法。 存储器件包括具有多个行和列的存储器单元的矩阵; 矩阵包括多行操作存储单元，每行存储单元用于存储可变值，并且每行至少一行辅助存储单元存储固定值。 存储器件还包括用于将选定值写入操作存储单元的写入电路，以及用于读取从操作或辅助存储器单元存储的值的读取电路。 该方法包括从辅助存储单元行读取输出值，响应于输出值与固定值的丢失匹配来确定存储器件的故障，根据读出错误的模式确定故障原因 输出值和相应的固定值，并提供指示故障原因的信号。