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1.发明授权公开(公告)号：US10954121B2
公开(公告)日：2021-03-23
申请号：US16708271
申请日：2019-12-09
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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Patent Agency Ranking
2.发明授权公开(公告)号：US10227233B2
公开(公告)日：2019-03-12
申请号：US15379091
申请日：2016-12-14
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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3.发明申请公开(公告)号：US20180086633A1
公开(公告)日：2018-03-29
申请号：US15460767
申请日：2017-03-16
Applicant: STMicroelectronics S.r.l.
Inventor： Roberto Somaschini , Pietro Petruzza
CPC classification number: B81C1/00595 , B81B3/0083 , B81B2201/042 , B81C1/00206 , B81C2201/0132 , B81C2201/0198 , G02B5/003 , G02B26/0833 , G02B26/101 , G03B21/008 , G03B21/2033 , G03B21/28
Abstract: A roughened silicon surface is formed by a process including repetitively performed roughening cycles. Each roughening cycles including a step for depositing a non-planar polymeric layer over an area of a silicon body and a step for plasma etching the polymeric layer and the area of the silicon body etch in a non-unidirectional way. As a result, a surface portion of the silicon body is removed, in a non-uniform way, to a depth not greater than 10 nm.
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公开(公告)号：US10364145B2
公开(公告)日：2019-07-30
申请号：US15460767
申请日：2017-03-16
Applicant: STMicroelectronics S.r.l.
Inventor： Roberto Somaschini , Pietro Petruzza
Abstract: A roughened silicon surface is formed by a process including repetitively performed roughening cycles. Each roughening cycles including a step for depositing a non-planar polymeric layer over an area of a silicon body and a step for plasma etching the polymeric layer and the area of the silicon body etch in a non-unidirectional way. As a result, a surface portion of the silicon body is removed, in a non-uniform way, to a depth not greater than 10 nm.
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5.发明授权公开(公告)号：US10570009B2
公开(公告)日：2020-02-25
申请号：US16283254
申请日：2019-02-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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6.发明申请公开(公告)号：US20190185318A1
公开(公告)日：2019-06-20
申请号：US16283254
申请日：2019-02-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
CPC classification number: B81C1/00269 , B81B3/0097 , B81B2201/0242 , B81B2201/0264 , B81B2201/042 , B81B2203/0315 , B81C3/001 , B81C2201/019 , B81C2203/0118 , B81C2203/019 , B81C2203/037
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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