-
公开(公告)号：US20220085229A1
公开(公告)日：2022-03-17
申请号：US17534159
申请日：2021-11-23
IPC分类号： H01L31/107 , H01L27/144 , H01L31/0352 , H01L31/18
摘要： In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.
-
公开(公告)号：US20200020821A1
公开(公告)日：2020-01-16
申请号：US16508039
申请日：2019-07-10
IPC分类号： H01L31/107 , H01L27/144 , H01L31/0352 , H01L31/18
摘要： In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.
-
3.发明申请公开(公告)号：US20190319158A1
公开(公告)日：2019-10-17
申请号：US16386163
申请日：2019-04-16
IPC分类号： H01L31/14 , H01L27/144 , H01L31/024 , H01L31/0216 , H01L31/0352 , H01L31/107 , H01L31/18 , G01J1/44
摘要： A photodetector includes a Geiger mode avalanche photodiode, which includes a body of semiconductor material, which is delimited by a front surface. The avalanche photodiode further includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The photodetector further includes: a dielectric region, arranged on the front surface; a quenching resistor, which extends on the dielectric region, is electrically connected to the anode region, and is laterally spaced apart with respect to the anode region; and an optical-isolation region, which extends through the dielectric region and laterally delimits a portion of the dielectric region, the anode region extending underneath the portion of the dielectric region, the optical-isolation region being moreover interposed between the portion of the dielectric region and the quenching resistor.
-
公开(公告)号：US20240266459A1
公开(公告)日：2024-08-08
申请号：US18608301
申请日：2024-03-18
IPC分类号： H01L31/107 , H01L27/144 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1075 , H01L27/1443 , H01L31/0352 , H01L31/18
摘要： In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.
-
公开(公告)号：US20210320219A1
公开(公告)日：2021-10-14
申请号：US17357653
申请日：2021-06-24
IPC分类号： H01L31/12 , H01L31/0376 , H01L31/107 , H01L31/18 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/34
摘要： An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.
-
-
-
-
搜索结果
5 条记录 (耗时 0.014 秒)
