公开(公告)号：US11626323B2

公开(公告)日：2023-04-11

申请号：US17177042

申请日：2021-02-16

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

发明人： Toshiyuki Kosaka ,  Haruo Kawata

IPC分类号： H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L21/768 ,  H01L21/033 ,  H01L21/02 ,  H01L29/20 ,  H01L27/088 ,  H01L21/66 ,  H01L23/14

摘要： A semiconductor device is made by: forming a metal film containing Al on a surface of a substrate product including a substrate and a nitride semiconductor layer on the substrate, the metal film covering a via hole forming predetermined region, and the surface of the substrate product being located on the nitride semiconductor layer side, forming an etching mask having an opening for exposing the via hole forming predetermined region on a back surface of the substrate product, the back surface of the substrate product being located on the substrate side, and forming a via hole in the substrate product by reactive ion etching, the via hole reaching the surface from the back surface and exposing the metal film. In the forming of the via hole, a reaction gas containing fluorine is used during a period at least including a termination of etching.

公开(公告)号：US10957591B2

公开(公告)日：2021-03-23

申请号：US16277856

申请日：2019-02-15

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

发明人： Toshiyuki Kosaka ,  Shunsuke Kurachi

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/288 ,  H01L23/00

摘要： A process of forming a semiconductor device is disclosed, where the semiconductor device provides a substrate. The process includes steps of: (a) depositing a first metal layer containing nickel (Ni) on a secondary surface of the substrate and within a substrate via provided in the substrate; (b) depositing a second metal layer on the first metal layer by electrolytic plating; (c) depositing a third metal layer on the second metal layer, where the third metal layer contains at least one of Ni and titanium (Ti); (d) exposing the second metal layer in a portion that excepts the substrate via and a periphery of the substrate via by partly removing the third metal layer; and (e) die-bonding the semiconductor device on an assembly substrate by interposing solder between the secondary surface of the substrate and the assembly substrate.

公开(公告)号：US11515208B2

公开(公告)日：2022-11-29

申请号：US17178158

申请日：2021-02-17

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

发明人： Toshiyuki Kosaka ,  Shunsuke Kurachi

IPC分类号： H01L23/00 ,  H01L21/768 ,  H01L21/285 ,  H01L21/288

摘要： A semiconductor device that comprises a substrate with a primary surface and a secondary surface opposite to the primary surface. The primary surface provides a semiconductor active device. The semiconductor device includes a base metal layer deposited on the secondary surface and within the substrate via in which a vacancy is formed, and an additional metal layer on the base metal layer, the additional metal layer having different wettability against a solder as compared to the base metal layer whereby the solder is contactable by the base metal layer and repelled by the additional metal layer. The semiconductor device is die-bonded on the assembly substrate by interposing the solder between the secondary surface and the assembly substrate. The base metal layer in a portion that excepts the substrate via and a periphery of the substrate via by partly removing the additional metal layer is in contact with the solder.

公开(公告)号：US10943821B2

公开(公告)日：2021-03-09

申请号：US16521936

申请日：2019-07-25

申请人： Sumitomo Electric Device Innovations, Inc.

发明人： Toshiyuki Kosaka ,  Haruo Kawata

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L21/033 ,  H01L21/02 ,  H01L21/66

摘要： A method of manufacturing a semiconductor device includes: forming a metal film containing Al on a surface of a substrate product including a substrate and a nitride semiconductor layer on the substrate, the metal film covering a via hole forming predetermined region, and the surface of the substrate product being located on the nitride semiconductor layer side, forming an etching mask having an opening for exposing the via hole forming predetermined region on a back surface of the substrate product, the back surface of the substrate product being located on the substrate side, and forming a via hole in the substrate product by reactive ion etching, the via hole reaching the surface from the back surface and exposing the metal film. In the forming of the via hole, a reaction gas containing fluorine is used during a period at least including a termination of etching.

公开(公告)号：US09368405B2

公开(公告)日：2016-06-14

申请号：US14608879

申请日：2015-01-29

申请人： Sumitomo Electric Device Innovations, Inc.

发明人： Toshiyuki Kosaka ,  Hiroshi Kawakubo

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L21/768 ,  H01L21/268 ,  H01L21/306 ,  H01L29/20

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31133 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L29/2003 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

摘要： A method for manufacturing a semiconductor device that includes steps of: (1) adhering a support substrate to a first surface of a wafer using an adhesive, the wafer including first and second scribe lines extending along first and second directions, respectively, (2) thinning the wafer, (3) forming a groove in a first scribe line excluding a region located in an outer peripheral portion of the wafer, the groove piercing the wafer from the first surface to a second surface opposite to the first surface to expose the adhesive, the first scribe line and the second scribe line demarcating chip regions; and (4) removing the adhesive by immersing the wafer adhered to the support substrate in a solvent such that the solvent permeates into the groove.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：（1）使用粘合剂将支撑衬底粘附到晶片的第一表面，所述晶片包括分别沿着第一和第二方向延伸的第一和第二划线，（2） 使晶片变薄，（3）除了位于晶片的外周部分的区域之外的第一划线中形成凹槽，将晶片从第一表面刺穿到与第一表面相对的第二表面以暴露粘合剂 ，第一划线和第二划线划分芯片区域; 和（4）通过将附着在支撑基板上的晶片浸入溶剂中以使溶剂渗透到槽中来去除粘合剂。