公开(公告)号：US10192778B2

公开(公告)日：2019-01-29

申请号：US15917123

申请日：2018-03-09

申请人： SunEdison Semiconductor Limited (UEN201334164H)

发明人： Sasha Joseph Kweskin

IPC分类号： H01L21/30 ,  H01L21/762 ,  H01L21/683 ,  H01L21/311 ,  H01L21/67

摘要： A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer.

公开(公告)号：US20170256442A1

公开(公告)日：2017-09-07

申请号：US15450124

申请日：2017-03-06

申请人： SunEdison Semiconductor Limited (UEN201334164H)

发明人： Sasha Joseph Kweskin

IPC分类号： H01L21/762 ,  H01L21/311 ,  H01L21/683

CPC分类号： H01L21/76254 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/6835 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer.

公开(公告)号：US10573550B2

公开(公告)日：2020-02-25

申请号：US16079215

申请日：2017-03-03

申请人： SUNEDISON SEMICONDUCTOR LIMITED

发明人： Sasha Joseph Kweskin

IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L21/324 ,  H01L27/12

摘要： A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration.

公开(公告)号：US20180197769A1

公开(公告)日：2018-07-12

申请号：US15917123

申请日：2018-03-09

申请人： SunEdison Semiconductor Limited (UEN201334164H)

发明人： Sasha Joseph Kweskin

IPC分类号： H01L21/762 ,  H01L21/683 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/76254 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/6835 ,  H01L2221/68368 ,  H01L2221/68381

摘要： A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer.

公开(公告)号：US10026642B2

公开(公告)日：2018-07-17

申请号：US15450124

申请日：2017-03-06

申请人： SunEdison Semiconductor Limited (UEN201334164H)

发明人： Sasha Joseph Kweskin

IPC分类号： H01L21/30 ,  H01L21/762 ,  H01L21/683 ,  H01L21/311 ,  H01L21/67

摘要： A method is provided for preparing a semiconductor-on-insulator structure comprising a sacrificial layer.

公开(公告)号：US11114332B2

公开(公告)日：2021-09-07

申请号：US16079373

申请日：2017-03-03

申请人： SUNEDISON SEMICONDUCTOR LIMITED

发明人： Sasha Joseph Kweskin

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L27/12

摘要： A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon nitride layer deposited by plasma deposition.

公开(公告)号：US20190057897A1

公开(公告)日：2019-02-21

申请号：US16079215

申请日：2017-03-03

申请人： SUNEDISON SEMICONDUCTOR LIMITED

发明人： Sasha Joseph Kweskin

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L21/324 ,  H01L27/12

CPC分类号： H01L21/76254 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/324 ,  H01L27/1203

摘要： A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration.

公开(公告)号：US20150357180A1

公开(公告)日：2015-12-10

申请号：US14734693

申请日：2015-06-09

申请人： SunEdison Semiconductor Limited (UEN201334164H)

发明人： Sasha Joseph Kweskin ,  Lara Short ,  Tracy M. Ragan ,  James R. Capstick

IPC分类号： H01L21/02 ,  H01L21/306

CPC分类号： H01L21/02052 ,  H01L21/02024

摘要： Methods for cleaning semiconductor substrates with cleaning baths including ammonium hydroxide, hydrogen peroxide and a non-ionic surfactant are disclosed. The methods may result in reduced re-adhesion of released particles during cleaning which produces cleaner substrates.

摘要翻译： 公开了使用包括氢氧化铵，过氧化氢和非离子表面活性剂的清洗浴来清洗半导体衬底的方法。 这些方法可能导致在清洁期间释放的颗粒的再附着减少，这产生更清洁的基底。