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    Tunnel junction type josephson device
    1.
    发明授权
    Tunnel junction type josephson device 失效
    隧道结型约瑟夫森装置

    公开(公告)号：US6157044A

    公开(公告)日：2000-12-05

    申请号：US029361

    申请日：1993-03-10

    申请人： Hidenori Nakanishi ,  Saburo Tanaka ,  Hideo Itozaki ,  Shuji Yazu

    发明人： Hidenori Nakanishi ,  Saburo Tanaka ,  Hideo Itozaki ,  Shuji Yazu

    IPC分类号： H01L39/22 ,  H01L39/24 ,  H01L29/06 ,  H01L39/00

    CPC分类号： H01L39/225

    摘要： A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.

    摘要翻译： 隧道结型约瑟夫逊装置包括由复合氧化物超导体材料形成的一对超导体层和形成在该对超导体层之间的绝缘体层。 绝缘体层由复合氧化物形成，该复合氧化物由与超导体层的复合氧化物超导体材料相同的构成元素构成，但是具有不具有超导特性的原子比。 此外，超导体层和绝缘体层在供给氧的同时连续地形成。

    Construction of electrical connection to oxide superconductor
    4.
    发明授权
    Construction of electrical connection to oxide superconductor 失效
    电连接到氧化物超导体的构造

    公开(公告)号：US5357059A

    公开(公告)日：1994-10-18

    申请号：US545618

    申请日：1990-06-29

    申请人： Saburo Tanaka ,  Hideo Itozaki ,  Hidenori Nakanishi

    发明人： Saburo Tanaka ,  Hideo Itozaki ,  Hidenori Nakanishi

    IPC分类号： H01L39/00 ,  H01L39/24 ,  H01B12/00

    CPC分类号： H01L39/2474 ,  Y10S505/706 ,  Y10S505/925

    摘要： An electrical connection between an electric conductor and an oxide superconductor is effected without the intermediary of a thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere. This electrical connection is formed by removing the thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere, and by electrically connecting the electric conductor and an exposed surface of the oxide superconductor.

    摘要翻译： 电导体和氧化物超导体之间的电连接是在没有通过将氧化物超导体留在大气中而形成的薄绝缘层的介质的情况下实现的。 通过去除通过在氧化物中留下氧化物超导体而形成的薄绝缘层，并且通过电连接导电体和氧化物超导体的暴露表面而形成该电连接。

    Process for preparing a-axis oriented high-temperature superconducting thin films
    6.
    发明授权
    Process for preparing a-axis oriented high-temperature superconducting thin films 失效
    制备面向A轴的高温超导薄膜的工艺

    公开(公告)号：US5151408A

    公开(公告)日：1992-09-29

    申请号：US668263

    申请日：1991-03-11

    申请人： Saburo Tanaka ,  Hidenori Nakanishi ,  Hideo Itozaki

    发明人： Saburo Tanaka ,  Hidenori Nakanishi ,  Hideo Itozaki

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2461 ,  Y10S505/731 ,  Y10S505/732

    摘要： A process for preparing a-axis oriented thin film of oxide superconducting material on a substrate by two steps. In the first step, an under-layer of an oxide superconducting material is deposited on the substrate under such a condition that the substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of the oxide superconducting material. In the second step, an upper-layer of the same oxide superconducting material is deposited on a surface of the resulting under-layer under such a condition that the substrate is heated at a temperature which is lowered by 10.degree. to 100.degree. C. than the temperature which is used in the first step.

    Process for preparing superconducting junction of oxide superconductor
    9.
    发明授权
    Process for preparing superconducting junction of oxide superconductor 失效
    制备氧化物超导体超导结的方法

    公开(公告)号：US5292718A

    公开(公告)日：1994-03-08

    申请号：US957639

    申请日：1992-10-06

    申请人： Saburo Tanaka ,  Hidenori Nakanishi ,  Hideo Itozaki ,  Takashi Matsuura

    发明人： Saburo Tanaka ,  Hidenori Nakanishi ,  Hideo Itozaki ,  Takashi Matsuura

    IPC分类号： H01L39/24 ,  B05D5/12

    CPC分类号： H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/73 ,  Y10S505/731 ,  Y10S505/732

    摘要： Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order.In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600.degree.-650.degree. C. for at least 5 minutes in the presence of O.sub.2, and is heated at a temperature between 200.degree. and 400.degree. C. during the non-superconducting intermediate thin film layer is deposited.

    摘要翻译： 通过在衬底上依次沉积第一氧化物超导体薄层，非超导中间薄膜层和第二氧化物超导体薄膜层来制造超导结的工艺的改进。 在本发明中，非超导中间薄膜层由MgO构成，在O 2存在下将基板在600〜650℃预热至少5分钟，并在200度〜 在非超导中间薄膜层期间沉积400℃。

    Thin film superconductor with an interlayer on a silicon substrate
    10.
    发明授权
    Thin film superconductor with an interlayer on a silicon substrate 失效
    在硅衬底上具有中间层的薄膜超导体

    公开(公告)号：US5416062A

    公开(公告)日：1995-05-16

    申请号：US173482

    申请日：1993-12-27

    申请人： Keizo Harada ,  Hidenori Nakanishi ,  Hideo Itozaki

    发明人： Keizo Harada ,  Hidenori Nakanishi ,  Hideo Itozaki

    IPC分类号： C01G3/00 ,  C01G1/00 ,  C30B29/22 ,  H01L39/24 ,  B32B9/00

    CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/701

    摘要： A thin film of oxide superconductor deposited on a single crystal substrate of silicon wafer. A buffer layer of (100) or (110) oriented Ln.sub.2 O.sub.3, in which Ln stands for Y or lanthanide elements is interposed between the thin film of oxide superconductor and the silicon wafer. A surface of silicon wafer is preferably cleaned satisfactorily by heat-treatment in vacuum before the buffer layer is deposited. An under-layer of metal oxide; ZrO.sub.2, YSZ or metal Y, Er is preferably interposed between the Ln.sub.2 O.sub.3 buffer layer and the silicon wafer.

    摘要翻译： 沉积在硅晶片的单晶衬底上的氧化物超导体的薄膜。 其中Ln代表Y或镧系元素的（100）或（110）取向的Ln2O3的缓冲层置于氧化物超导体的薄膜和硅晶片之间。 在沉积缓冲层之前，优选通过在真空中的热处理令人满意地清洁硅晶片的表面。 底层金属氧化物; ZrO 2，YSZ或金属Y，Er优选介于Ln 2 O 3缓冲层和硅晶片之间。