Tunnel junction type josephson device
    1.
    发明授权
    Tunnel junction type josephson device 失效
    隧道结型约瑟夫森装置

    公开(公告)号:US6157044A

    公开(公告)日:2000-12-05

    申请号:US029361

    申请日:1993-03-10

    CPC分类号: H01L39/225

    摘要: A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.

    摘要翻译: 隧道结型约瑟夫逊装置包括由复合氧化物超导体材料形成的一对超导体层和形成在该对超导体层之间的绝缘体层。 绝缘体层由复合氧化物形成,该复合氧化物由与超导体层的复合氧化物超导体材料相同的构成元素构成,但是具有不具有超导特性的原子比。 此外,超导体层和绝缘体层在供给氧的同时连续地形成。

    Method for forming continuous oxide superconducting layer having
difference thickness portions for superconducting device
    7.
    发明授权
    Method for forming continuous oxide superconducting layer having difference thickness portions for superconducting device 失效
    用于形成具有用于超导装置的不同厚度部分的连续氧化物超导层的方法

    公开(公告)号:US5418213A

    公开(公告)日:1995-05-23

    申请号:US64331

    申请日:1993-05-18

    IPC分类号: H01L39/24 H01L21/00

    摘要: A method for forming an oxide superconductor thin film having different thickness portions, in a process for manufacturing a superconductor device, includes the step of forming an oxide superconductor thin film having a uniform thickness on a substrates. A portion of the oxide superconductor thin film is etch-removed so that the oxide superconductor thin film has a thin thickness portion. Preferably, before the etching, the oxide superconductor thin film is coated with a metal layer, and the oxide superconductor thin film and the metal layer are etched together by means of a physical dry etching process.

    摘要翻译: 在制造超导体器件的方法中,形成具有不同厚度部分的氧化物超导体薄膜的方法包括在衬底上形成具有均匀厚度的氧化物超导体薄膜的步骤。 氧化物超导薄膜的一部分被蚀刻去除,使得氧化物超导体薄膜具有薄的厚度部分。 优选地,在蚀刻之前,氧化物超导体薄膜被涂覆有金属层,并且氧化物超导体薄膜和金属层通过物理干蚀刻工艺被蚀刻在一起。

    Superconducting material and method for preparing the same (Sr,
.gamma.).sub.x (La, .delta.).sub.1-x .epsilon..sub.y Cu.sub.1-y
O.sub.3-z
    8.
    发明授权
    Superconducting material and method for preparing the same (Sr, .gamma.).sub.x (La, .delta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-z 失效
    超导材料及其制备方法(Sr,γ)x(La,δ)1-xεyCu1-yO3-z

    公开(公告)号:US5189011A

    公开(公告)日:1993-02-23

    申请号:US815576

    申请日:1991-12-27

    IPC分类号: H01L39/12 H01L39/24

    摘要: A now superconducting material comprising a compound oxide represented by the general formula:(Sr,.gamma.).sub.x (La,.delta.).sub.1-x .epsilon..sub.y Cu.sub.1-y O.sub.3-zin which".gamma." represents an element of IIa group of the periodic table except Sr, an atomic ratio of .gamma. to Sr being selected in a range between 1% and 90%,".delta." represents an element of IIIa group of the periodic except La, an atomic ratio of .delta. to La is selected in a range between 1% and 90%,".epsilon." represents a metal element of Vb group of the periodic table, x, y and z are numbers each satisfies ranges of 0.ltoreq.x.ltoreq.1,0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1 respectively, and the expression of (Sr,.gamma.) and (La,.delta.) mean that the respective elements position predetermined sites in a crystal in a predetermined proportion.

    摘要翻译: 一种现在的超导材料,其包含由以下通式表示的复合氧化物:(Sr,γ)x(La,δ)1-xεyCu1-yO3-z,其中“γ”表示周期表的IIa族元素, Sr,γ至Sr的原子比在1%至90%的范围内选择,“delta”表示除了La之外的周期性IIIa族的元素,Δ与La的原子比选择在1 %和90%,“ε”表示周期表的Vb族的金属元素,x,y和z分别为0≤x≤0.0的范围。 ,和(z,γ)和(La,δ)的表达意味着各元素以预定比例将晶体中的预定位置定位。