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公开(公告)号：US20090091729A1
公开(公告)日：2009-04-09
申请号：US11868362
申请日：2007-10-05
CPC分类号： G03B27/32 , G03F7/70208
摘要： Lithography systems and methods of manufacturing semiconductor devices are disclosed. For example, a lithography system includes at least two reticle stages and a common projection lens system disposed between the reticle stages and a wafer stage, and at least one alignment system for aligning the reticle stages.
摘要翻译： 公开了制造半导体器件的平版印刷系统和方法。 例如，光刻系统包括至少两个标线片级和设置在标线片级和晶片级之间的公共投影透镜系统，以及用于对准标线片级的至少一个对准系统。
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公开(公告)号：US20090092926A1
公开(公告)日：2009-04-09
申请号：US11868374
申请日：2007-10-05
IPC分类号： G03C5/00
CPC分类号： G03F7/70466 , G03F1/26 , G03F1/70 , G03F7/70208 , G03F7/70283
摘要： Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.
摘要翻译： 公开了多光束光刻系统和使用其的制造半导体器件的方法。 例如，该方法利用玻璃上镀铬的电场边界的不重合或分布在两个掩模上的相移掩模特征，用于优化光刻工艺窗口，旁瓣抑制或使用一个掩模的图案取向依赖的工艺窗口优化 背面有偏振旋转胶片。
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公开(公告)号：US08715909B2
公开(公告)日：2014-05-06
申请号：US11868374
申请日：2007-10-05
IPC分类号： G03F7/20
CPC分类号： G03F7/70466 , G03F1/26 , G03F1/70 , G03F7/70208 , G03F7/70283
摘要： Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.
摘要翻译： 公开了多光束光刻系统和使用其的制造半导体器件的方法。 例如，该方法利用玻璃上镀铬的电场边界的不重合或分布在两个掩模上的相移掩模特征，用于优化光刻工艺窗口，旁瓣抑制或使用一个掩模的图案取向依赖的工艺窗口优化 背面有偏振旋转胶片。
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公开(公告)号：US20090023078A1
公开(公告)日：2009-01-22
申请号：US11781105
申请日：2007-07-20
申请人： Alois Gutmann , Sajan Marokkey , Henning Haffner , Chandrasekhar Sarma , Haoren Zhuang , Matthias Lipinski
发明人： Alois Gutmann , Sajan Marokkey , Henning Haffner , Chandrasekhar Sarma , Haoren Zhuang , Matthias Lipinski
摘要： Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.
摘要翻译： 公开了平版印刷掩模及其制造方法。 例如，制造光刻掩模的方法包括在衬底上形成叠层。 该堆叠包括底部衰减相移材料层，中间不透明材料层，最后是顶部抗蚀剂层。 该方法还包括图案化叠层，然后修整抗蚀剂层以露出不透明材料层的一部分。 随后蚀刻未覆盖的不透明材料层，随后除去任何剩余的抗蚀剂层。
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公开(公告)号：US20100297398A1
公开(公告)日：2010-11-25
申请号：US12847641
申请日：2010-07-30
CPC分类号： G03F1/50 , G02B5/3083 , Y10T428/24479
摘要： Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.
摘要翻译： 公开了平版印刷掩模及其制造方法。 优选实施例包括制造光刻掩模的方法。 所述方法包括提供衬底，在所述衬底的第一区域中形成第一图案，以及在所述衬底的第二区域中形成第二图案，所述第二图案包括不同于第一图案特征的图案的图案。 该方法包括在第一区域中比在衬底的第二区域中影响光的偏振旋转。
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公开(公告)号：US20080119048A1
公开(公告)日：2008-05-22
申请号：US11602886
申请日：2006-11-21
IPC分类号： H01L21/302
CPC分类号： G03F1/50 , G02B5/3083 , Y10T428/24479
摘要： Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.
摘要翻译： 公开了平版印刷掩模及其制造方法。 优选实施例包括制造光刻掩模的方法。 所述方法包括提供衬底，在所述衬底的第一区域中形成第一图案，以及在所述衬底的第二区域中形成第二图案，所述第二图案包括不同于第一图案特征的图案的图案。 该方法包括在第一区域中比在衬底的第二区域中影响光的偏振旋转。
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公开(公告)号：US07799486B2
公开(公告)日：2010-09-21
申请号：US11602886
申请日：2006-11-21
IPC分类号： G03F1/00
CPC分类号： G03F1/50 , G02B5/3083 , Y10T428/24479
摘要： Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.
摘要翻译： 公开了平版印刷掩模及其制造方法。 优选实施例包括制造光刻掩模的方法。 所述方法包括提供衬底，在所述衬底的第一区域中形成第一图案，以及在所述衬底的第二区域中形成第二图案，所述第二图案包括不同于第一图案特征的图案的图案。 该方法包括在第一区域中比在衬底的第二区域中影响光的偏振旋转。
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公开(公告)号：US08071261B2
公开(公告)日：2011-12-06
申请号：US11781105
申请日：2007-07-20
申请人： Alois Gutmann , Sajan Marokkey , Henning Haffner , Chandrasekhar Sarma , Haoren Zhuang , Matthias Lipinski
发明人： Alois Gutmann , Sajan Marokkey , Henning Haffner , Chandrasekhar Sarma , Haoren Zhuang , Matthias Lipinski
IPC分类号： G03F1/00
摘要： Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.
摘要翻译： 公开了平版印刷掩模及其制造方法。 例如，制造光刻掩模的方法包括在衬底上形成叠层。 该堆叠包括底部衰减相移材料层，中间不透明材料层，最后是顶部抗蚀剂层。 该方法还包括图案化叠层，然后修整抗蚀剂层以露出不透明材料层的一部分。 随后蚀刻未覆盖的不透明材料层，随后除去任何剩余的抗蚀剂层。
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公开(公告)号：US07947431B2
公开(公告)日：2011-05-24
申请号：US12847641
申请日：2010-07-30
CPC分类号： G03F1/50 , G02B5/3083 , Y10T428/24479
摘要： Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.
摘要翻译： 公开了平版印刷掩模及其制造方法。 优选实施例包括制造光刻掩模的方法。 所述方法包括提供衬底，在所述衬底的第一区域中形成第一图案，以及在所述衬底的第二区域中形成第二图案，所述第二图案包括不同于第一图案特征的图案的图案。 该方法包括在第一区域中比在衬底的第二区域中影响光的偏振旋转。
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公开(公告)号：US07666800B2
公开(公告)日：2010-02-23
申请号：US12030810
申请日：2008-02-13
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： Methods of patterning features of semiconductor devices and methods of processing and fabricating semiconductor devices are disclosed. In one embodiment, a method of processing a semiconductor device includes forming first sidewall spacers on a first hard mask, removing the first hard mask, and forming a first material layer over the first sidewall spacers. A second hard mask is formed over the first material layer and the first sidewall spacers. Second sidewall spacers are formed on the second hard mask, and the second hard mask is removed. At least the first sidewall spacers are patterned using the second sidewall spacers as a mask.
摘要翻译： 公开了半导体器件的图案化特征的方法和半导体器件的处理和制造方法。 在一个实施例中，一种处理半导体器件的方法包括在第一硬掩模上形成第一侧壁间隔物，去除第一硬掩模，以及在第一侧壁间隔物上形成第一材料层。 在第一材料层和第一侧壁间隔物上形成第二硬掩模。 在第二硬掩模上形成第二侧壁间隔物，并且去除第二硬掩模。 至少使用第二侧壁间隔件作为掩模来图案化第一侧壁间隔物。
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