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1.发明申请SYSTEM AND METHOD FOR IDENTIFICATION OF FINGERPRINTS AND MAPPING OF BLOOD VESSELS IN A FINGER 审中-公开指纹识别系统及方法及手指中血管形态的映射公开(公告)号：US20110007951A1
公开(公告)日：2011-01-13
申请号：US12777624
申请日：2010-05-11
CPC分类号： G06K9/00033 , G06K2009/00932
摘要： In accordance with an embodiment of the invention, there is provided an apparatus for characterizing and identifying a human. The apparatus comprises a light imaging device that images topography of a surface of a portion of human anatomy, and an infrared imaging device that images infrared radiation of the same portion of human anatomy. The light imaging device and the infrared imaging device are rotatable about at least one axis, each of the at least one axis extending through the portion of the anatomy.
摘要翻译： 根据本发明的实施例，提供了一种用于表征和识别人的装置。 该装置包括对人体解剖结构的一部分的表面进行成像的光成像装置，以及对人体解剖结构的相同部分的红外线进行成像的红外成像装置。 光成像装置和红外成像装置可围绕至少一个轴线旋转，所述至少一个轴线中的每一个延伸穿过解剖结构的部分。
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公开(公告)号：US07031502B1
公开(公告)日：2006-04-18
申请号：US10057316
申请日：2002-01-25
IPC分类号： G06K9/00
CPC分类号： G06K9/00013 , G06K9/00919
摘要： A guide can provide proper registration of an object such as a hand above a scanner device for imaging. The guide can include windows or slits so that the scanner device can produce an image such as a finger or palm in a natural state rather than being pressed against, for example, a flat surface such as glass. Thus, registration of a palm and/or a finger in the guide can be used to produce non-distorted high quality images of biometric patterns in their natural 3-dimensional state.
摘要翻译： 引导件可以提供诸如在扫描仪装置上方的手的对象的适当配准以进行成像。 引导件可以包括窗口或狭缝，使得扫描器装置可以以自然状态产生诸如手指或手掌的图像，而不是被压靠在诸如玻璃的平坦表面上。 因此，手指和/或手指在引导件中的配准可用于在其自然的三维状态下产生生物特征图案的非变形的高质量图像。
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公开(公告)号：US20070241368A1
公开(公告)日：2007-10-18
申请号：US11406838
申请日：2006-04-18
申请人： Samson Mil'shtein , John Palma
发明人： Samson Mil'shtein , John Palma
IPC分类号： H01L31/00
CPC分类号： H01L29/7783 , H01L29/42316
摘要： A field effect transistor (FET) having at least two independently biased gates can provide uniform electric field in the channel region of the FET. The same AC voltage may be applied to each gate for modulating the FET. One of the gates is positioned closer to the channel region than the other gate. Such a FET allows tailoring the electric field in the channel region of the FET so that it is substantially uniform. The FET exhibits desirable performance characteristics, including having a constant transconductance.
摘要翻译： 具有至少两个独立偏置栅极的场效应晶体管（FET）可以在FET的沟道区域中提供均匀的电场。 可以向每个栅极施加相同的AC电压以调制FET。 一个栅极位于比另一个栅极更靠近沟道区域的位置。 这样的FET允许调整FET的沟道区域中的电场，使得其基本均匀。 FET具有期望的性能特征，包括具有恒定的跨导。
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公开(公告)号：US06833571B1
公开(公告)日：2004-12-21
申请号：US10188733
申请日：2002-07-02
申请人： Samson Mil'shtein , Carlos A. Gil
发明人： Samson Mil'shtein , Carlos A. Gil
IPC分类号： H01L2976
CPC分类号： H01L29/8122 , H01L29/0891 , H01L29/41725
摘要： A transistor device includes a gate region disposed adjacent to a semiconductor substrate such that a low impedance channel is formed between a source region and drain region of a transistor device when a voltage is applied to its gate. The drain region of the device can be disposed aside the gate region on a common surface of the semiconductor substrate. The source region of the device also can be disposed adjacent to the substrate but on a side of the semiconductor substrate opposing the drain and/or gate regions. Based on this topology, a transistor device can be fabricated with a buried source to enhance its operating characteristics such as switching speed.
摘要翻译： 晶体管器件包括与半导体衬底相邻设置的栅极区域，使得当向其栅极施加电压时，在晶体管器件的源极区域和漏极区域之间形成低阻抗沟道。 器件的漏极区域可以放置在半导体衬底的公共表面上的栅极区域的旁边。 器件的源极区域也可以被布置成与衬底相邻，但是在与漏极和/或栅极区域相对的半导体衬底的一侧上。 基于这种拓扑结构，可以用埋入源制造晶体管器件，以增强其工作特性，例如开关速度。
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公开(公告)号：US06961449B2
公开(公告)日：2005-11-01
申请号：US10050691
申请日：2002-01-16
申请人： Samson Mil'shtein , Joel Therrien
发明人： Samson Mil'shtein , Joel Therrien
CPC分类号： G06K9/6202
摘要： A method and apparatus for computing correlating images for image recognition is provided. In particular, the method is used to compare images of a biometric object to authorize an individual or verify whether an individual is the person he claims to be. The biometric objects may include fingerprints, hand or palm prints, and retina scans. The method uses a deviation of symmetry of correlation functions to determine whether the images are of a same object.
摘要翻译： 提供了一种用于计算图像识别图像的方法和装置。 特别地，该方法用于比较生物特征对象的图像以授权个体或者验证个体是否是他声称的人。 生物特征物体可以包括指纹，手或手印，以及视网膜扫描。 该方法使用相关函数的对称偏差来确定图像是否是相同的对象。
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公开(公告)号：US6037830A
公开(公告)日：2000-03-14
申请号：US074770
申请日：1998-05-08
申请人： Samson Mil'shtein , Sergey Nabokin , Shixian Sui
发明人： Samson Mil'shtein , Sergey Nabokin , Shixian Sui
IPC分类号： H03K17/0412 , H03K17/687 , H03K17/785
CPC分类号： H03K17/687 , H03K17/04123
摘要： A uniform tailored electrical field in a multigate field effect D-mode transistor is automatically provided by a feedback circuit which couples drain bias voltages to the gates of a multigate transistor to bias the gates incrementally such that the highest voltage is applied to the gate nearest the drain while the lowest voltage is applied to the gate nearest the source. E-mode multigate FET's carry higher gate voltage on the gate close to the source compared to a gate voltage on a last gate, located close to the drain. The proper distribution of gate voltages improves the transconductance G.sub.m of the transistor and decreases gate capacitance C.sub.gs, which increases the speed of operation of a multigate FETs.
摘要翻译： 多重场效应D模式晶体管中的均匀定制的电场由反馈电路自动提供，反馈电路将漏极偏置电压耦合到多晶硅晶体管的栅极，以逐渐偏置栅极，使得最高电压施加到最接近 漏极，而最低电压施加到最靠近源极的栅极。 与靠近漏极的最后一个栅极上的栅极电压相比，E模式多栅极FET在靠近源极的栅极上承载更高的栅极电压。 栅极电压的适当分布提高了晶体管的跨导Gm并降低了栅极电容Cgs，这增加了多栅FET的工作速度。
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公开(公告)号：US20100314610A1
公开(公告)日：2010-12-16
申请号：US12757252
申请日：2010-04-09
IPC分类号： H01L29/778
CPC分类号： H01L29/7785 , H01L23/291 , H01L23/3171 , H01L2924/0002 , H01L2924/00
摘要： A HEMT with improved electron confinement is formed by removing semiconductor cap material between the channel and the source and drain regions. The source and drain regions can be isolated from the gate region by an insulating layer. Significant noise reduction can be achieved as a result of these techniques. Also, removing the semiconductor cap material can provide an increased breakdown voltage for the transistor.
摘要翻译： 通过在沟道和源极和漏极区之间去除半导体盖材料形成具有改善的电子约束的HEMT。 源极和漏极区可以通过绝缘层与栅极区隔离。 作为这些技术的结果，可以实现显着的降噪。 此外，去除半导体盖材料可以提供晶体管的增加的击穿电压。
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公开(公告)号：US20100039164A1
公开(公告)日：2010-02-18
申请号：US12604525
申请日：2009-10-23
IPC分类号： H03K3/01
CPC分类号： H01L29/7783
摘要： A field effect transistor has a shifted gate such that the gate-source distance depends on the ratio of the threshold voltage to the drain voltage. In one embodiment, a switch may include two FETs: one FET in a series configuration and one FET in a shunt configuration. Providing a switch having at least one FET with a shifted gate allows increasing switching speed and decreasing insertion loss.
摘要翻译： 场效应晶体管具有偏移的栅极，使得栅源距离取决于阈值电压与漏极电压的比率。 在一个实施例中，开关可以包括两个FET：串联配置中的一个FET和分流配置中的一个FET。 提供具有至少一个具有偏移栅极的FET的开关允许增加开关速度和减小插入损耗。
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9.发明公开公开(公告)号：US20230178673A1
公开(公告)日：2023-06-08
申请号：US17535813
申请日：2021-11-26
IPC分类号： H01L31/0747
CPC分类号： H01L31/0747
摘要： History of commercial production of solar cells made from polysilicon material (Eff =15 -17%) and from amorphous silicon (Eff = 9 - 12%) has accumulated understanding of deficiencies and limitations of these solar cells. The present design combines following technical requirements: a) ability to harvest energy from widest part of sun spectrum; b) offer highest values of absorption coefficient for photons of the selected part of sun spectrum; c) ensure highest efficiency of conversion of incident photons into electron-hole pairs or photocarriers while ensuring lowest recombination rate; d) The simplicity of fabrication and low cost of mass production.
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公开(公告)号：US20100109050A1
公开(公告)日：2010-05-06
申请号：US12612420
申请日：2009-11-04
申请人： Samson Mil'shtein , John F. Palma
发明人： Samson Mil'shtein , John F. Palma
IPC分类号： H01L29/778 , H01L27/08
CPC分类号： H01L29/7783 , H01L29/42316
摘要： A field effect transistor (FET) having at least two independently biased gates can provide uniform electric field in the channel region of the FET. The same AC voltage may be applied to each gate for modulating the FET. One of the gates is positioned closer to the channel region than the other gate. Such a FET allows tailoring the electric field in the channel region of the FET so that it is substantially uniform. The FET exhibits desirable performance characteristics, including having a constant transconductance.
摘要翻译： 具有至少两个独立偏置栅极的场效应晶体管（FET）可以在FET的沟道区域中提供均匀的电场。 可以向每个栅极施加相同的AC电压以调制FET。 一个栅极位于比另一个栅极更靠近沟道区域的位置。 这样的FET允许调整FET的沟道区域中的电场，使得其基本均匀。 FET具有期望的性能特征，包括具有恒定的跨导。
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