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1.发明授权Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same 有权氧化锌前体和使用其的沉积氧化锌基薄膜的方法公开(公告)号：US08932389B2
公开(公告)日：2015-01-13
申请号：US13681191
申请日：2012-11-19
发明人： Sooho Park , Seohyun Kim , Jeongwoo Park , Taejung Park , YoungZo Yoo , GunSang Yoon , Eun-Ho Choi , Myong Woon Kim , Bogyeong Kim , Hyung Soo Shin , Seung Ho Yoo , Sang Do Lee , Sang Ick Lee , Sang Jun Yim
CPC分类号： C07F3/06 , C07F17/00 , C23C16/407
摘要： A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.
摘要翻译： 用于沉积氧化锌基薄膜的氧化锌前体含有具有下式的一种或多种其衍生物：其中R 1和R 2是氢或C n H 2n + 1。 n为选自1至3的数，R1和R2为选自氢，甲基，乙基和异丙基的一个。 沉积氧化锌基薄膜的方法包括以下步骤：将基底装载到沉积室中; 并将上述氧化锌前体和氧化剂供给到沉积室中，并通过化学气相沉积在衬底上形成氧化锌基薄膜。 在一个示例性实施例中，氧化锌基薄膜可以通过大气压化学气相沉积在基板上形成。
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2.发明授权Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the same 有权含有烷基锌卤化物的氧化锌前体和使用其的沉积氧化锌基薄膜的方法公开(公告)号：US08858694B2
公开(公告)日：2014-10-14
申请号：US13681108
申请日：2012-11-19
发明人： Sooho Park , Seohyun Kim , Jeongwoo Park , Taejung Park , Young Zo Yoo , GunSang Yoon , Eun-Ho Choi , Myong Woon Kim , Bogyeong Kim , Hyung Soo Shin , Seung Ho Yoo , Sang Do Lee , Sang Ick Lee , Sang Jun Yim
CPC分类号： C07F3/06 , C23C16/08 , C23C16/407
摘要： A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group CnH2n+1, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.
摘要翻译： 用于沉积氧化锌基薄膜的氧化锌前体包含具有下式的烷基卤化锌：R-Zn-X，其中R是烷基C n H 2n + 1，X是卤素基团。 n为1〜4的数，烷基为甲基，乙基，异丙基，叔丁基等。 卤素基团包含选自F，Br，Cl和I中的一种。沉积氧化锌基薄膜的方法包括将衬底加载到沉积室中; 并将含有上述烷基卤化锌和氧化剂的氧化锌前体供给到沉积室中，并通过化学气相沉积在衬底上形成氧化锌基薄膜。 氧化锌基薄膜通过大气压化学气相沉积沉积在基板上。
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3.发明申请ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME 有权氧化锌前驱体和使用其形成基于氧化锌的薄膜的方法公开(公告)号：US20130171341A1
公开(公告)日：2013-07-04
申请号：US13681191
申请日：2012-11-19
发明人： Sooho Park , Seohyun Kim , Jeongwoo Park , Taejung Park , YoungZo Yoo , GunSang Yoon , Eun-Ho Choi , Myong Woon Kim , Bogyeong Kim , Hyung Soo Shin , Seung Ho Yoo , Sang Do Lee , Sang Ick Lee , Sang Jun Yim
IPC分类号： C07F3/06
CPC分类号： C07F3/06 , C07F17/00 , C23C16/407
摘要： A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.
摘要翻译： 用于沉积氧化锌基薄膜的氧化锌前体含有具有下式的一种或多种其衍生物：其中R 1和R 2是氢或C n H 2n + 1。 n为选自1至3的数，R1和R2为选自氢，甲基，乙基和异丙基的一个。 沉积氧化锌基薄膜的方法包括以下步骤：将基底装载到沉积室中; 并将上述氧化锌前体和氧化剂供给到沉积室中，并通过化学气相沉积在衬底上形成氧化锌基薄膜。 在一个示例性实施例中，氧化锌基薄膜可以通过大气压化学气相沉积在基板上形成。
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4.发明授权Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same 有权氧化锌前体和使用其的沉积氧化锌基薄膜的方法公开(公告)号：US09514857B2
公开(公告)日：2016-12-06
申请号：US14049352
申请日：2013-10-09
发明人： SooHo Park , JongSe Park , Young Zo Yoo , Joo Young Lee , Seo Hyun Kim , Gun Sang Yoon , Myong Woon Kim , Hyung Soo Shin , Seung Ho Yoo , Sang Do Lee , Sang Ick Lee , Sang Jun Yim
IPC分类号： H01B1/08 , C03C17/245 , C23C16/40 , C23C16/448 , H01L21/02 , H01L31/18 , H01L31/0224
CPC分类号： H01B1/08 , C03C17/245 , C03C2217/216 , C23C16/407 , C23C16/448 , H01L21/02554 , H01L21/0262 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.
摘要翻译： 氧化锌（ZnO）前体以及使用其制备ZnO基薄膜的方法，可以沉积出高质量和高纯度的ZnO基薄膜。 ZnO前体包括含有至少两种混合的有机溶剂的混合溶剂和包含在混合溶剂中稀释的二乙基锌或二甲基锌的源材料。
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5.发明申请ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME 有权氧化锌前驱体和使用其形成基于氧化锌的薄膜的方法公开(公告)号：US20140099443A1
公开(公告)日：2014-04-10
申请号：US14049352
申请日：2013-10-09
发明人： SooHo Park , JongSe Park , Young Zo Yoo , Joo Young Lee , Seo Hyun Kim , Gun Sang Yoon , Myong Woon Kim , Hyung Soo Shin , Seung Ho Yoo , Sang Do Lee , Sang Ick Lee , Sang Jun Yim
CPC分类号： H01B1/08 , C03C17/245 , C03C2217/216 , C23C16/407 , C23C16/448 , H01L21/02554 , H01L21/0262 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.
摘要翻译： 氧化锌（ZnO）前体以及使用其制备ZnO基薄膜的方法，可以沉积出高质量和高纯度的ZnO基薄膜。 ZnO前体包括含有至少两种混合的有机溶剂的混合溶剂和包含在混合溶剂中稀释的二乙基锌或二甲基锌的源材料。
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