ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME
    3.
    发明申请
    ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME 有权
    氧化锌前驱体和使用其形成基于氧化锌的薄膜的方法

    公开(公告)号:US20130171341A1

    公开(公告)日:2013-07-04

    申请号:US13681191

    申请日:2012-11-19

    IPC分类号: C07F3/06

    CPC分类号: C07F3/06 C07F17/00 C23C16/407

    摘要: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.

    摘要翻译: 用于沉积氧化锌基薄膜的氧化锌前体含有具有下式的一种或多种其衍生物:其中R 1和R 2是氢或C n H 2n + 1。 n为选自1至3的数,R1和R2为选自氢,甲基,乙基和异丙基的一个。 沉积氧化锌基薄膜的方法包括以下步骤:将基底装载到沉积室中; 并将上述氧化锌前体和氧化剂供给到沉积室中,并通过化学气相沉积在衬底上形成氧化锌基薄膜。 在一个示例性实施例中,氧化锌基薄膜可以通过大气压化学气相沉积在基板上形成。

    Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same
    6.
    发明授权
    Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same 有权
    氧化锌前体和使用其的沉积氧化锌基薄膜的方法

    公开(公告)号:US08932389B2

    公开(公告)日:2015-01-13

    申请号:US13681191

    申请日:2012-11-19

    CPC分类号: C07F3/06 C07F17/00 C23C16/407

    摘要: A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.

    摘要翻译: 用于沉积氧化锌基薄膜的氧化锌前体含有具有下式的一种或多种其衍生物:其中R 1和R 2是氢或C n H 2n + 1。 n为选自1至3的数,R1和R2为选自氢,甲基,乙基和异丙基的一个。 沉积氧化锌基薄膜的方法包括以下步骤:将基底装载到沉积室中; 并将上述氧化锌前体和氧化剂供给到沉积室中,并通过化学气相沉积在衬底上形成氧化锌基薄膜。 在一个示例性实施例中,氧化锌基薄膜可以通过大气压化学气相沉积在基板上形成。