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1.
公开(公告)号:US20230411560A1
公开(公告)日:2023-12-21
申请号:US18101711
申请日:2023-01-26
Applicant: Samsung Display Co., LTD.
Inventor: Hye Lim KANG , Si Sung KIM , Hyung Seok KIM , Dong Eon LEE , Jong Jin LEE
CPC classification number: H01L33/382 , H01L33/62 , H01L2933/0016 , H01L33/20 , H01L33/005
Abstract: A light emitting element includes a first semiconductor layer, a light emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light emitting layer, an electrode layer disposed on the second semiconductor layer, and an insulative film. The insulative film surrounds side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer, and surrounds a portion of the electrode layer at a first end portion at which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer, and a second surface facing the first surface, the second surface having a width greater than a width of the first surface.
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2.
公开(公告)号:US20240128409A1
公开(公告)日:2024-04-18
申请号:US18316513
申请日:2023-05-12
Applicant: Samsung Display Co., LTD.
Inventor: Hyung Seok KIM , Hye Lim KANG , Si Sung KIM , Jong Jin LEE , Dong Eon LEE
IPC: H01L33/38 , H01L25/075 , H01L33/62
CPC classification number: H01L33/382 , H01L25/0753 , H01L33/62 , H01L2933/0016
Abstract: A light emitting element may include a first semiconductor layer, an emission layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the emission layer, an insulating film, and an electrode layer. The insulating film may enclose a side surface of the first semiconductor layer, a side surface of the emission layer, and a side surface of the second semiconductor layer. The electrode layer may be disposed on the second semiconductor layer and the insulating film. The insulating film may not enclose the electrode layer.
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公开(公告)号:US20230207740A1
公开(公告)日:2023-06-29
申请号:US17969072
申请日:2022-10-19
Applicant: Samsung Display Co., LTD.
Inventor: Jong Jin LEE , Si Sung KIM , Hyung Seok KIM , Dong Eon LEE
CPC classification number: H01L33/44 , H01L33/38 , H01L25/167 , H01L33/0093
Abstract: A light emitting element includes a light emitting element core extending in a direction and including first and second semiconductor layers and an element active layer disposed between the first and second semiconductor layers. The light emitting element includes an element electrode layer on the second semiconductor layer of the light emitting element core, and an element insulating film surrounding a side surface of the light emitting element core and a side surface of the element electrode layer. The element electrode layer overlaps the second semiconductor layer in the direction the light emitting element core extends, an area of the element electrode layer in plan view is smaller than an area of the second semiconductor layer in plan view, and the element insulating film completely exposes a surface of the element electrode layer, the surface being opposite to another surface of the element electrode layer facing the second semiconductor layer.
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公开(公告)号:US20230073501A1
公开(公告)日:2023-03-09
申请号:US17894894
申请日:2022-08-24
Applicant: Samsung Display Co., LTD.
Inventor: Si Sung KIM , Hyun Min CHO , Hyung Seok KIM , Jong Jin LEE , Dong Eon LEE
Abstract: A light emitting element includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an element active layer between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the element active layer, and the second semiconductor layer are sequentially located along a first direction. A thickness of the first semiconductor layer in the first direction is greater than a thickness of the second semiconductor layer in the first direction. A cross section of the element active layer taken along the first direction includes a first side facing the first semiconductor layer, a second side facing the second semiconductor layer, a first lateral side connecting one end of the first side to one end of the second side, and a second lateral side connecting an other end of the first side to an other end of the second side.
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公开(公告)号:US20250081673A1
公开(公告)日:2025-03-06
申请号:US18819017
申请日:2024-08-29
Applicant: Samsung Display Co., LTD.
Inventor: So Young LEE , Bong Chun PARK , Kwan Jae LEE , Dong Eon LEE , Seung A LEE , Jong Jin LEE
Abstract: A display device includes a first electrode and a second electrode spaced apart from each other, and light emitting elements disposed between the first electrode and the second electrode. Each of the light emitting elements include a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. Each of the light emitting elements emits light with a wavelength in a range of about 464 nm to about 468 nm at a current density in a range of about 0.5 A/cm2 to about 100 A/cm2, and has a maximum external quantum efficiency greater than or equal to about 15%.
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公开(公告)号:US20240284706A1
公开(公告)日:2024-08-22
申请号:US18545905
申请日:2023-12-19
Applicant: Samsung Display Co., LTD.
Inventor: Bong Chun PARK , Kwan Jae LEE , Dong Eon LEE , So Young LEE , Seung A LEE , Jong Jin LEE
IPC: H10K59/121 , C09K11/62 , H10K59/12 , H10K59/122 , H10K59/126 , H10K59/131 , H10K85/30
CPC classification number: H10K59/1213 , C09K11/62 , H10K59/1201 , H10K59/122 , H10K59/126 , H10K59/131 , H10K85/326
Abstract: A light emitting element includes: a first semiconductor layer of a first type; a first auxiliary layer on the first semiconductor layer and having a first indium composition ratio; a second auxiliary layer on the first auxiliary layer and having a second indium composition ratio; an active layer including barrier layers and well layers that are alternately arranged on the second auxiliary layer and having a third indium composition ratio; and a second semiconductor layer on the active layer and of a second type different from the first type. The second indium composition ratio is greater than the first indium composition ratio and is less than the third indium composition ratio.
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公开(公告)号:US20230062301A1
公开(公告)日:2023-03-02
申请号:US17704659
申请日:2022-03-25
Applicant: Samsung Display Co., LTD.
Inventor: Hyung Seok KIM , Si Sung KIM , Jong Jin LEE , Dong Eon LEE
Abstract: A light emitting element includes a first semiconductor layer; an emission layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the emission layer; an electrode layer disposed on the second semiconductor layer; and an insulating film surrounding side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer and surrounding a portion of the electrode layer at an end portion of the light emitting element on which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer; a second surface facing the first surface and having a width less than a width of the first surface; and a side surface that connects the first surface and the second surface and has a slope in a range of about 75° to about 90° with respect to the first surface of the electrode layer.
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公开(公告)号:US20230378397A1
公开(公告)日:2023-11-23
申请号:US18192577
申请日:2023-03-29
Applicant: Samsung Display Co., LTD.
Inventor: Hyung Seok KIM , Si Sung KIM , Jong Jin LEE , Dong Gyun KIM , Dong Eon LEE , Hyun Min CHO , Sang Wook HAN
IPC: H01L33/38 , H01L33/20 , H01L25/075
CPC classification number: H01L33/382 , H01L33/20 , H01L25/0753
Abstract: A light emitting element includes: a light emitting element core including a first semiconductor layer, a light emitting layer on the first semiconductor layer, and a second semiconductor layer on the light emitting layer; and a first element insulating layer surrounding a side surface of the light emitting element core. An outer surface of the first element insulating layer has a first outer surface adjacent to one surface of the first semiconductor layer, the one surface of the first semiconductor layer being opposite to another surface of the first semiconductor layer facing the second semiconductor layer, and a second outer surface farther away from a side surface of the first semiconductor layer than the first outer surface is.
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