公开(公告)号：US20190157367A1

公开(公告)日：2019-05-23

申请号：US16250642

申请日：2019-01-17

Applicant: Samsung Display Co., Ltd.

Inventor： DONG HEE LEE ,  Hyun Ju Kang ,  Sang Won Shin

IPC: H01L27/32 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78645 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

公开(公告)号：US09627548B2

公开(公告)日：2017-04-18

申请号：US14841559

申请日：2015-08-31

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju Kang ,  Dong Hee Lee ,  Gwang Min Cha ,  Sang Won Shin ,  Sang Woo Sohn

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/47635 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.

公开(公告)号：US09410234B2

公开(公告)日：2016-08-09

申请号：US14670403

申请日：2015-03-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju Kang ,  Sang Woo Sohn ,  Sang Won Shin ,  Dong Hee Lee ,  Chang Oh Jeong

IPC: C23C14/34 ,  C23C14/04

CPC classification number: C23C14/044 ,  H01J37/34 ,  H01J37/3447

Abstract: Provided are a sputtering device and a method of forming a layer using the same.The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.

Abstract translation: 提供溅射装置和使用其形成层的方法。 使用溅射装置形成层的方法包括：将基板放置在室内; 使用溅射工艺将从面向衬底的靶发射的靶颗粒沉积在衬底上; 并且水平移动多个屏蔽杆，其安装在设置在基板和靶之间的屏蔽掩模中，并且在溅射过程期间沿着第一方向彼此分离。

公开(公告)号：US10734461B2

公开(公告)日：2020-08-04

申请号：US16250642

申请日：2019-01-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Hee Lee ,  Hyun Ju Kang ,  Sang Won Shin

IPC: H01L27/32 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51

Abstract: An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

公开(公告)号：US10192944B2

公开(公告)日：2019-01-29

申请号：US15237866

申请日：2016-08-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Hee Lee ,  Hyun Ju Kang ,  Sang Won Shin

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/49 ,  H01L29/423 ,  H01L29/51 ,  H01L29/786

Abstract: An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.