公开(公告)号：US11004677B2

公开(公告)日：2021-05-11

申请号：US16103116

申请日：2018-08-14

申请人： Samsung Display Co., Ltd.

发明人： Dong Kyun Ko ,  Woo Jin Kim ,  In Kyo Kim ,  Keun Hee Park ,  Suk Won Jung

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L23/522 ,  H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/517

摘要： A method and a device for forming a highly dielectric metal oxide layer. The method includes repeatedly causing a plasma-off period and a plasma-on period while an organic metal compound and an oxidizing agent are continuously injected into a chamber. One cycle includes one plasma-off period and one plasma-on period. During the plasma-off period, a physical and chemical adsorption layer including an organic metal compound and a plurality of atomic layers is formed on a substrate. During the plasma-on period, a metal oxide layer that is thicker than two atomic layers is formed by a chemical reaction of metal atoms in the physical and chemical adsorption layer and oxygen atoms in the oxidizing agent.

公开(公告)号：US10679858B2

公开(公告)日：2020-06-09

申请号：US16163629

申请日：2018-10-18

申请人： Samsung Display Co., Ltd.

发明人： Dong Kyun Ko ,  Woo Jin Kim ,  Myung Soo Huh ,  In Kyo Kim ,  Keun Hee Park

IPC分类号： H01L21/28 ,  C23C16/448 ,  C23C16/452 ,  C23C16/455 ,  H01L29/51

摘要： A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.

公开(公告)号：US09809880B2

公开(公告)日：2017-11-07

申请号：US14444231

申请日：2014-07-28

申请人： Samsung Display Co. Ltd.

发明人： Choel Min Jang ,  In Kyo Kim ,  Suk Won Jung ,  Myung Soo Huh

IPC分类号： C23C16/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54

CPC分类号： C23C16/45546 ,  C23C16/45502 ,  C23C16/45527 ,  C23C16/45548 ,  C23C16/45578 ,  C23C16/545

摘要： An atomic layer deposition apparatus includes a first base plate on which a seat portion is defined to allow a substrate to be seated thereon, a second base plate disposed opposite to the first base plate, a first gas nozzle portion arranged on the second base plate, a second gas nozzle portion arranged on the second base plate to be spaced apart from the first gas nozzle portion and substantially parallel to the first gas nozzle portion, and a gas storage portion connected to the first gas nozzle portion and the second gas nozzle portion.