摘要:
A sensor substrate includes a base substrate, and a sensing transistor and a switching transistor, which are on the base substrate. The sensing transistor includes a first gate electrode, an optical response pattern on the first gate electrode, a first source electrode and a first drain electrode on the optical response pattern and spaced apart from each other, a first oxide semiconductor pattern between the first source electrode and the optical response pattern, and a second oxide semiconductor pattern between the first drain electrode and the optical response pattern. The switching transistor includes a second gate electrode, a third oxide semiconductor pattern on the second gate electrode, and a second source electrode and a second drain electrode on the third oxide semiconductor pattern to be spaced apart from each other.
摘要:
A substrate-treating apparatus includes a process chamber including a space therein, a lower electrode which is in the space of the process chamber and supports the substrate, an upper electrode which faces the lower electrode in the process chamber, a high frequency supply line which includes a feed point which applies a high frequency power to the lower electrode, and a modulator which asymmetrically supplies a dielectric substance to a lower portion of the lower electrode with reference to a center portion of the lower electrode.