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    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US20130328049A1

    公开(公告)日：2013-12-12

    申请号：US13652967

    申请日：2012-10-16

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Tae-Young CHOI ,  Bo-Sung KIM

    IPC: H01L29/786 ,  H01L21/336 ,  H01L29/04

    CPC classification number: H01L27/1292 ,  B82Y10/00 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/0005 ,  H01L51/0023 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/102

    Abstract: A thin-film transistor substrate includes a gate line, and a gate electrode connected to the gate line, on a base substrate; an insulating layer on the gate electrode, the insulating layer including a first part and a second part, the first part having a hydrophobic property and the second part having a hydrophilic property; a data line extended in a different direction from the gate line, and a source electrode connected to the data line and on the second part of the insulating layer; a drain electrode on the second part of the insulating layer, the drain electrode spaced apart from the source electrode; a semi-conductor pattern overlapping the source electrode, the drain electrode and a gap between the spaced apart source and drain electrodes, where the semi-conductor pattern exposes the first part of the insulating layer; and a pixel electrode in contact with the drain electrode.

    Abstract translation: 薄膜晶体管基板包括在基底基板上的栅极线和连接到栅极线的栅电极; 在所述栅电极上的绝缘层，所述绝缘层包括第一部分和第二部分，所述第一部分具有疏水性，所述第二部分具有亲水性; 沿着与栅极线不同的方向延伸的数据线，以及连接到数据线和绝缘层的第二部分的源电极; 绝缘层的第二部分上的漏电极，与电极间隔开的漏电极; 半导体图案与源电极，漏电极和间隔开的源极和漏极之间的间隙重叠，其中半导体图案暴露绝缘层的第一部分; 以及与漏电极接触的像素电极。

    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号：US20150008437A1

    公开(公告)日：2015-01-08

    申请号：US14495835

    申请日：2014-09-24

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Yeon Taek JEONG ,  Bo Sung KIM ,  Doo-Hyoung LEE ,  June Whan CHOI ,  Tae-Young CHOI ,  Kano MASATAKA

    IPC: H01L29/423 ,  H01L29/51 ,  H01L29/49 ,  H01L29/786

    CPC classification number: H01L29/42384 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/512 ,  H01L29/786 ,  H01L2029/42388

    Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

    Abstract translation: 提供薄膜晶体管。 根据本发明的示例性实施例的薄膜晶体管包括：基板; 栅极线，设置在所述基板上并且包括栅电极; 半导体层，设置在所述基板上，并且至少包括与所述栅电极重叠的部分; 设置在所述栅极线和所述半导体层之间的栅极绝缘层; 以及设置在所述基板上并且在所述半导体层的沟道区域上彼此面对的源电极和漏电极。 栅极绝缘层包括第一区域和第二区域，第一区域对应于半导体层的沟道区域，第一区域由第一材料制成，第二区域由第二材料制成，第一材料 并且第二材料具有不同的碳和硅原子数比。

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