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公开(公告)号：US11101298B2
公开(公告)日：2021-08-24
申请号：US16884182
申请日：2020-05-27
发明人： Jinwoo Lee , Waljun Kim , Kiwan Ahn , Yongjae Jang , Jaehyuk Jang , Yugwang Jeong
IPC分类号： H01L27/12 , H01L29/423 , G09G3/3266 , G09G3/3275 , H01L29/417 , G09G3/3233 , H01L29/786 , H01L27/32
摘要： A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.
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公开(公告)号：US10700104B2
公开(公告)日：2020-06-30
申请号：US16047248
申请日：2018-07-27
发明人： Jinwoo Lee , Waljun Kim , Kiwan Ahn , Yongjae Jang , Jaehyuk Jang , Yugwang Jeong
IPC分类号： H01L27/12 , H01L29/423 , G09G3/3266 , G09G3/3275 , H01L29/417 , G09G3/3233 , H01L29/786 , H01L27/32
摘要： A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.
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公开(公告)号：US10283529B2
公开(公告)日：2019-05-07
申请号：US15337401
申请日：2016-10-28
发明人： Shinil Choi , Hyunmin Cho , Sanggab Kim , Sunghoon Yang , Yugwang Jeong , Byungdu Ahn
IPC分类号： G02F1/1368 , H01L27/12 , G02F1/1333 , G02F1/1343 , G02F1/1362 , H01L27/32 , H01L29/423 , H01L29/66 , H01L29/786
摘要： A method of manufacturing a thin-film transistor includes forming an oxide semiconductor on a substrate, stacking an insulating layer and a metal layer on the substrate to cover the oxide semiconductor, forming a photosensitive pattern on the metal layer, forming a gate electrode by etching the metal layer using the photosensitive pattern as a mask, where a part of the gate electrode overlaps a first oxide semiconductor region of the oxide semiconductor, forming a gate insulating film by partially etching the insulating layer using the photosensitive pattern as a mask, where the gate insulating film includes a first insulating region with a first thickness under the photosensitive pattern and a second insulating region with a second thickness less than the first thickness, and performing plasma processing on the gate insulating film so that a second oxide semiconductor region of the oxide semiconductor under the second insulating region becomes conductive.
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4.发明申请公开(公告)号：US20200295048A1
公开(公告)日：2020-09-17
申请号：US16884182
申请日：2020-05-27
发明人： Jinwoo Lee , Waljun Kim , Kiwan Ahn , Yongjae Jang , Jaehyuk Jang , Yugwang Jeong
IPC分类号： H01L27/12 , H01L29/423 , G09G3/3266 , G09G3/3275 , H01L29/417 , G09G3/3233
摘要： A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.
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5.发明申请公开(公告)号：US20190051669A1
公开(公告)日：2019-02-14
申请号：US16047248
申请日：2018-07-27
发明人： Jinwoo LEE , Waljun Kim , Kiwan Ahn , Yongjae Jang , Jaehyuk Jang , Yugwang Jeong
IPC分类号： H01L27/12 , H01L29/423 , H01L29/417 , G09G3/3266 , G09G3/3275 , H01L27/32
摘要： A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.
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公开(公告)号：US20240322077A1
公开(公告)日：2024-09-26
申请号：US18602289
申请日：2024-03-12
发明人： Hyuneok Shin , Sungjoo Kwon , Juhyun Lee , Yangho Jung , Yungbin Chung , Yugwang Jeong
IPC分类号： H01L33/24 , H01L25/075
CPC分类号： H01L33/24 , H01L25/0753
摘要： A display apparatus includes a display panel including a display area, multiple first partitions disposed on the display panel in the display area, and a first auxiliary layer arranged on at least a portion of outer surfaces of the first partitions and including an opening arranged between adjacent first partitions.
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公开(公告)号：US11152400B2
公开(公告)日：2021-10-19
申请号：US16884182
申请日：2020-05-27
发明人： Jinwoo Lee , Waljun Kim , Kiwan Ahn , Yongjae Jang , Jaehyuk Jang , Yugwang Jeong
IPC分类号： H01L27/12 , H01L29/423 , G09G3/3266 , G09G3/3275 , H01L29/417 , G09G3/3233 , H01L29/786 , H01L27/32
摘要： A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.
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公开(公告)号：US12127445B2
公开(公告)日：2024-10-22
申请号：US17451880
申请日：2021-10-22
发明人： Yugwang Jeong , Daesoo Kim , Sungwon Cho , Subin Bae
IPC分类号： H01L27/14 , H01L27/12 , H01L29/786 , H10K59/12 , H10K59/121 , H10K59/123 , H10K59/131 , H10K71/00
CPC分类号： H10K59/123 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/78648 , H01L29/78675 , H01L29/7869 , H10K59/1201 , H10K59/1213 , H10K59/1216 , H10K59/131 , H10K71/00
摘要： A display apparatus includes: a substrate; a first semiconductor layer on the substrate, and including a silicon semiconductor; a second semiconductor layer on the first semiconductor layer, and including an oxide semiconductor; a first conductive layer on the second semiconductor layer; at least one metal layer between the first semiconductor layer and the first conductive layer; and a first contact hole to electrically connect the first semiconductor layer to the first conductive layer. An inner surface of the first contact hole includes a side surface of the at least one metal layer.
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公开(公告)号：US20240155874A1
公开(公告)日：2024-05-09
申请号：US18239125
申请日：2023-08-29
发明人： Subin Bae , Dawoon Jung , Taewook Kang , Yunjong Yeo , Yugwang Jeong
IPC分类号： H10K59/122 , H10K59/12 , H10K59/35
CPC分类号： H10K59/122 , H10K59/1201 , H10K59/353
摘要： A display panel includes a substrate including first, second, and third emission areas, an organic insulating layer on the substrate, first, second, and third pixel electrodes on the organic insulating layer, a pixel-defining layer in which first, second, and third openings, and an out-gassing hole are defined. The first, second, and third openings extend to at least a portion of each of the first, second, and third pixel electrodes. First, second, and third emission layers are respectively on the first, second, and third pixel electrodes. The out-gassing hole includes first, second, and third out-gassing holes defined around the first, second, and third openings. An area of the first out-gassing hole is greater than areas of the second and third out-gassing holes.
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公开(公告)号：US20230023524A1
公开(公告)日：2023-01-26
申请号：US17690129
申请日：2022-03-09
发明人： Subin Bae , Dawoon Jung , Yugwang Jeong , Sungwon Cho , Myounggeun Cha , Sanggun Choi
摘要： A display device includes: a substrate including a display area including a first pixel area, a component area adjacent to the display area, and a non-display area adjacent to the display area, where the component area includes a second pixel area and a transmission area, and the non-display area includes a bending area; a first inorganic layer continuously arranged in the transmission area on the substrate, where a lower opening overlapping the bending area is defined through the first inorganic layer; a blocking layer on the first inorganic layer, a blocking layer opening overlapping the transmission area and an intermediate opening overlapping the lower opening are defined through the blocking layer; and a display element layer on the blocking layer, where the display element layer includes a first display element overlapping the first pixel area and a second display element overlapping the second pixel area.
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