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1.发明公开公开(公告)号：US20230215954A1
公开(公告)日：2023-07-06
申请号：US18176454
申请日：2023-02-28
发明人： YONG SU LEE , Yoon Ho KHANG , Dong Jo KIM , Hyun Jae NA , Sang Ho PARK , Se Hwan YU , Chong Sup CHANG , Dae Ho KIM , Jae Neung Kim , Myoung Geun CHA , Sang Gab KIM , Yu-Gwang JEONG
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417
CPC分类号： H01L29/78633 , H01L29/78618 , H01L27/1288 , H01L27/124 , H01L29/7869 , H01L27/1225 , H01L29/78696 , H01L29/66969 , H01L29/41733 , H10K59/1213
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US10861978B2
公开(公告)日：2020-12-08
申请号：US16231781
申请日：2018-12-24
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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3.发明申请公开(公告)号：US20190312147A1
公开(公告)日：2019-10-10
申请号：US16231781
申请日：2018-12-24
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L29/786 , H01L27/12 , H01L29/417 , H01L29/66
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US12087865B2
公开(公告)日：2024-09-10
申请号：US18176454
申请日：2023-02-28
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/12 , H01L29/417 , H01L29/66 , H01L29/786 , H10K59/121
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H10K59/1213
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US10831294B2
公开(公告)日：2020-11-10
申请号：US15969238
申请日：2018-05-02
发明人： Jae Neung Kim , Do Hyun Kwon , Chang Yong Jung , Choong Youl Im
摘要： A display device according to an exemplary embodiment includes: a display panel that displays an image; and a touch sensor that is provided on the display panel, wherein the touch sensor includes a sense electrode that senses a touch and a shield layer that is disposed between the sense electrode and the display panel while partially overlapping the sense electrode, the sense electrode includes a plurality of conductive lines that are connected with each other and have a mesh shape, the plurality of conductive lines includes a first conductive line and a second conductive line that are disposed on different layers, and the shield layer overlaps at least one of the first conductive line and the second conductive line.
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公开(公告)号：US10001875B2
公开(公告)日：2018-06-19
申请号：US15645383
申请日：2017-07-10
发明人： Sung Kyun Park , Cheol Kyu Kim , Ki Hyun Cho , Sun Haeng Cho , Kyung Seop Kim , Jae Neung Kim
IPC分类号： C23F1/00 , G06F3/041 , G06F3/044 , G06F3/0354 , H01L31/18
CPC分类号： G06F3/0416 , G06F3/03547 , G06F3/041 , G06F3/044 , G06F2203/04103 , G06F2203/04111 , H01L31/1888
摘要： A touch panel and a method of fabricating the same are provided. The touch panel may include: a substrate; first sensing electrodes disposed on a first surface and arranged along a first direction and second sensing electrodes arranged along a second direction; at least one first connector connecting the first sensing electrodes in the first direction; a first insulating layer pattern disposed on the first connector; at least one second connector disposed on the first insulating layer pattern, intersecting the first connector, and connecting the second sensing electrodes in the second direction; and wires disposed on the first surface of the substrate in the peripheral area and electrically connected to the first sensing electrodes and the second sensing electrodes. The first connector includes a first light-transmitting conductive pattern disposed on the first surface of the substrate and a first light-blocking conductive pattern disposed on the first light-transmitting conductive pattern.
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公开(公告)号：US11594639B2
公开(公告)日：2023-02-28
申请号：US17115470
申请日：2020-12-08
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gap Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US10126886B2
公开(公告)日：2018-11-13
申请号：US14712953
申请日：2015-05-15
发明人： Shin Il Choi , Jae Neung Kim , Su Bin Bae , Yu-Gwang Jeong
摘要： A transparent electrode pattern includes a first electrode including a first lower conductive layer and a first upper conductive layer located on the first lower conductive layer and a second electrode spaced apart from the first electrode and including a second lower conductive layer and a second upper conductive layer positioned on the second lower conductive layer. The first and second lower conductive layers may include a metal nanowire. The first and second upper conductive layers may include a transparent conductive material that is dry-etchable.
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公开(公告)号：US10031628B2
公开(公告)日：2018-07-24
申请号：US14986160
申请日：2015-12-31
发明人： Ki Hyun Cho , Jae Neung Kim , Cheol Kyu Kim , Kyung Seop Kim
摘要： A touch screen panel includes a substrate, first and second sensing patterns, first and second pattern connecting lines, a pad portion, and lines. The first and second sensing patterns are disposed on the substrate in a sensing area and arranged in directions intersecting each other. The first pattern connecting lines are disposed in the same layer as the first sensing patterns and the second sensing patterns, and electrically connect adjacent first sensing patterns to each other. The second pattern connecting lines intersect to be insulated from the first pattern connecting lines, and electrically connect adjacent second sensing patterns to each other. The pad portion is disposed on the substrate in a peripheral area, and includes pads. The lines connect the first sensing patterns and the second sensing patterns to the pads.
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公开(公告)号：US09927934B2
公开(公告)日：2018-03-27
申请号：US15009209
申请日：2016-01-28
发明人： Jae Neung Kim , Sun Haeng Cho , Ki-Hyun Cho
CPC分类号： G06F3/044 , G06F2203/04102 , G06F2203/04103 , G06F2203/04111 , G06F2203/04112 , Y10S977/762
摘要： A flexible touch panel includes a touch sensor unit disposed on a flexible substrate. The flexible touch panel includes a transparent conductive layer, a first transparent conductive oxide layer, and a second transparent conductive oxide layer that are sequentially deposited and sequentially contact each other.
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