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    THERMOSENSITIVE COPOLYMERS, FORWARD OSMOSIS WATER TREATMENT DEVICES INCLUDING THE SAME, AND METHODS OF PRODUCING AND USING THE SAME
    2.
    发明申请
    THERMOSENSITIVE COPOLYMERS, FORWARD OSMOSIS WATER TREATMENT DEVICES INCLUDING THE SAME, AND METHODS OF PRODUCING AND USING THE SAME 有权
    热塑性共聚物，包括其的前向处理水处理装置及其制造方法和使用方法

    公开(公告)号：US20130240444A1

    公开(公告)日：2013-09-19

    申请号：US13845471

    申请日：2013-03-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Bo Kyung JUNG ,  Jae Eun KIM ,  Sung Soo HAN ,  Hyo KANG ,  Hyo Rang KANG ,  Jung Im HAN

    IPC: C08G69/42 ,  C02F1/44

    CPC classification number: C08G69/42 ,  B01D61/002 ,  C02F1/445 ,  C08G73/10 ,  Y02P20/126

    Abstract: A thermosensitive copolymer may include a first repeating unit having a temperature-sensitive oligomer and a second repeating unit having an ionic moiety and a counter ion to the ionic moiety. The temperature-sensitive oligomer may be an oligomer including a repeating unit derived from a unsaturated monomer with a moiety represented by Chemical Formula 1 or Chemical Formula 2, or an oligomer including a repeating unit derived from a heterocyclic compound having C, N, O, and a C═N bond in its ring. *-C(═O)N(R2)(R3)  [Chemical Formula 1] R2 and R3 may each independently be hydrogen or a linear or branched C1 to C6 alkyl group, a C3 to C7 cycloalkyl group, or a C6 to C10 aryl group, R2 and R3 may not both be hydrogen, and R2 and R3 may be combined to form a nitrogen containing heterocycle. R4 may be a C2 to C5 alkylene group.

    Abstract translation: 热敏共聚物可以包括具有温度敏感性低聚物的第一重复单元和具有离子部分的离子部分和与离子部分的抗衡离子的第二重复单元。 温度敏感性低聚物可以是包含源自具有由化学式1或化学式2表示的部分的不饱和单体的重复单元的低聚物，或包含衍生自具有C，N，O， 和环中的C = N键。 * -C（= O）N（R 2）（R 3）[化学式1] R 2和R 3可各自独立地为氢或直链或支链C 1至C 6烷基，C 3至C 7环烷基或C 6至C 10 芳基，R2和R3不能都是氢，R2和R3可以组合形成含氮杂环。 R4可以是C2-C5亚烷基。

    SELECTIVELY MODIFIED NANOPOROUS STRUCTURE AND PRODUCTION METHODS THEREOF
    10.
    发明申请
    SELECTIVELY MODIFIED NANOPOROUS STRUCTURE AND PRODUCTION METHODS THEREOF 有权
    选择性修正的纳米结构及其生产方法

    公开(公告)号：US20140141231A1

    公开(公告)日：2014-05-22

    申请号：US14024092

    申请日：2013-09-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： You Hwan SON ,  Jae Eun KIM ,  Bo Kyung JUNG ,  Hyo Rang KANG

    IPC: B01D69/04

    CPC classification number: B01D67/0058 ,  B01D67/006 ,  B01D67/0093 ,  B01D71/02 ,  B01D71/024 ,  B01D71/027 ,  Y10T428/249953

    Abstract: A method of selectively modifying a structure including preparing a structure including a nano-sized through-pore, filling the nano-sized through-pore with a surfactant, removing a portion of the surfactant from both ends of the nano-sized through-pore to expose a portion of an internal surface of the nano-sized through-pore, modifying the exposed internal surface of the nano-sized through-pore with a first compound, removing the surfactant from the nano-sized through-pore having the internal surface modified with the first compound to expose an internal surface that remains unmodified with the first compound, and modifying with a second compound the exposed internal surface without being modified with the first compound, the second compound being different from the first compound.

    Abstract translation: 选择性地修饰结构的方法，包括制备包括纳米尺寸通孔的结构，用表面活性剂填充纳米尺寸的通孔，从纳米尺寸的通孔的两端除去一部分表面活性剂到 暴露纳米尺寸通孔的内表面的一部分，用第一化合物修饰纳米尺寸通孔的暴露内表面，从具有内表面改性的纳米尺寸通孔去除表面活性剂 第一化合物暴露出用第一化合物保持未修饰的内表面，并且用第二化合物修饰暴露的内表面而不用第一化合物进行改性，第二化合物不同于第一化合物。

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