公开(公告)号：US20170200738A1

公开(公告)日：2017-07-13

申请号：US15403307

申请日：2017-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo Soon KIM ,  Hyun Ji KIM ,  Jeong Yun LEE ,  Gi Gwan PARK ,  Sang Duk PARK ,  Young Mook OH ,  Yong Seok LEE

IPC: H01L27/12 ,  H01L29/423 ,  H01L21/84 ,  H01L29/06

CPC classification number: H01L27/1203 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823468 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/4991 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/7853

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure. The semiconductor device includes a substrate including a first region and a second region, a first wire pattern provided on the first region of the substrate and spaced apart from the substrate, a second wire pattern provided on the second region of the substrate and spaced apart from the substrate, a first gate insulating film surrounding a perimeter of the first wire pattern, a second gate insulating film surrounding a perimeter of the second wire pattern, a first gate electrode provided on the first gate insulating film, intersecting with the first wire pattern, and including a first metal oxide film therein, a second gate electrode provided on the second gate insulating film and intersecting with the second wire pattern, a first gate spacer on a sidewall of the first gate electrode, and a second gate spacer on a sidewall of the second gate electrode.

公开(公告)号：US20180158836A1

公开(公告)日：2018-06-07

申请号：US15869599

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo Soon KIM ,  Hyun Ji KIM ,  Jeong Yun LEE ,  Gi Gwan PARK ,  Sang Duk PARK ,  Young Mook OH ,  Yong Seok LEE

IPC: H01L27/12 ,  H01L29/06 ,  H01L29/423 ,  H01L21/84

CPC classification number: H01L27/1203 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823468 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/4991 ,  H01L29/517 ,  H01L29/66439 ,  H01L29/7853

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure. The semiconductor device includes a substrate including a first region and a second region, a first wire pattern provided on the first region of the substrate and spaced apart from the substrate, a second wire pattern provided on the second region of the substrate and spaced apart from the substrate, a first gate insulating film surrounding a perimeter of the first wire pattern, a second gate insulating film surrounding a perimeter of the second wire pattern, a first gate electrode provided on the first gate insulating film, intersecting with the first wire pattern, and including a first metal oxide film therein, a second gate electrode provided on the second gate insulating film and intersecting with the second wire pattern, a first gate spacer on a sidewall of the first gate electrode, and a second gate spacer on a sidewall of the second gate electrode.