Vertical non-volatile memory device

    公开(公告)号:US11637115B2

    公开(公告)日:2023-04-25

    申请号:US16893524

    申请日:2020-06-05

    摘要: A vertical non-volatile memory device includes a stack body including gate patterns and interlayer insulating patterns stacked in a stacking direction, the stack body having a through hole, which extends in the stacking direction, in the gate patterns and in the interlayer insulating patterns; a semiconductor pillar in the through hole and extending in the stacking direction; data storage structures between the gate patterns and the semiconductor pillar in the through hole, the data storage structures including charge storage layers; and dummy charge storage layers on a sidewall of the interlayer insulating patterns toward the semiconductor pillar in the through hole.